Fairchild FQA9P25 Specifications manual

5QFETTM

December 2000

FQA9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -10.5A, -250V, RDS(on) = 0.62Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 29 n C) planar stripe, DMOS technology. Low Crss ( typical 27 p F) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the

Improved dv/dt capability

avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.

TO-3P

FQA Series G

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQA9P25 Units VDSS Drain-Source Voltage -250 ID Drain Current - Continuous (TC = 25°C) -10.5

- Continuous (TC = 100°C) -6.6

IDM Drain Current - Pulsed (Note 1) -42 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) -10.5 EAR Repetitive Avalanche Energy (Note 1) m J

dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 1.2 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8” from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 0.83 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W

©2000 Fairchild Semiconductor International Rev. A2, December 2000