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Fairchild FQAF12N60 Specifications

Summary

Elevate your power conversion designs with this N-Channel MOSFET. Built for high-efficiency switch mode power supplies, this robust component features fast switching capabilities and reliable performance up to 600V while minimizing on-state resistance. This comprehensive datasheet provides professional engineers with critical technical ratings, detailed electrical specifications (including $R_{DS(on)}$ and capacitances), thermal characteristics, and precise switching parameters necessary for accurate circuit design and implementation.

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Page 1 Text Content

April 2000

QFETTM

FQAF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 42 n C) planar stripe, DMOS technology. Low Crss ( typical 25 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the

Improved dv/dt capabilit

avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

TO-3PF

FQAF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF12N60 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 7.8

- Continuous (TC = 100°C) 4.9

IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage ±30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 7.8 EAR Repetitive Avalanche Energy (Note 1) m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 Vns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.8 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8 from case for 5 seconds

Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 1.25 °CW RθJA Thermal Resistance, Junction-to-Ambient °CW

©2000 Fairchild Semiconductor International Rev. A, April 2000

Page Summary Contents For Fairchild FQAF12N60 Specifications

Page 1 April 2000 QFETTM FQAF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced usi...
Page 2 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS Br...
Page 3 ap ac ita nc [p F] Typical Characteristics ra in -S ou rc n- es is ta nc ra in ur re nt Top : 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Notes : Notes : 1. 250s Pulse Test 1. V DS = 50V 2. 250...
Page 4 BV DS , ( or al iz ed , D ra in ur re nt [A ra in -S ou rc Br ea kd ow Vo lta ge Typical Characteristics (Continued) Notes : 1. V GS = 0 V Notes : 1. V GS = 10 V 2. I = 6.0 A TJ, Junction Temperature ...
Page 5 Gate Charge Test Circuit & Waveform Same Type as DUT Qgs Qgd Charge Resistive Switching Test Circuit & Waveforms VDS VDS 90% VGS RG 10% VGS td(on) tr td(off) on off Unclamped Inductive Switchi...
Page 6 Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver RG Same Type as DUT VDD dv/dt controlled by RG ISD controlled by pulse period Gate Pulse Width VGS D = Gate Pulse Period 10V ( Driver ) IF...
Page 7 Package Dimensions 3. 0. TO-3PF .5 ±0 .2 4. 0. 5.45TYP 5.45TYP ©2000 Fairchild Semiconductor International Rev. A, April 2000
Page 8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Hi S...

Manual Details

Brand Fairchild
Pages 8
File Size 553.09 KB
Published May 30, 2026
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Frequently Asked Questions

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current ($I_D$) is specified as 7.8 A.

Can I use this component in critical life support systems?

No, the product requires express written approval from Fairchild for use within life support devices or systems.

How should power dissipation be derated if operating above 25°C?

Power dissipation must be de-rated at a rate of 0.8 W/°C.