Fairchild FQAF12N60 Specifications
Summary
Elevate your power conversion designs with this N-Channel MOSFET. Built for high-efficiency switch mode power supplies, this robust component features fast switching capabilities and reliable performance up to 600V while minimizing on-state resistance. This comprehensive datasheet provides professional engineers with critical technical ratings, detailed electrical specifications (including $R_{DS(on)}$ and capacitances), thermal characteristics, and precise switching parameters necessary for accurate circuit design and implementation.
Page 1 Text Content
April 2000
QFETTM
FQAF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 42 n C) planar stripe, DMOS technology. Low Crss ( typical 25 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capabilit
avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
TO-3PF
FQAF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQAF12N60 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 7.8
- Continuous (TC = 100°C) 4.9
IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage ±30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 7.8 EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 Vns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.8 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8 from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 1.25 °CW RθJA Thermal Resistance, Junction-to-Ambient °CW
©2000 Fairchild Semiconductor International Rev. A, April 2000
Page Summary Contents For Fairchild FQAF12N60 Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 553.09 KB |
| Published | May 30, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current ($I_D$) is specified as 7.8 A.
Can I use this component in critical life support systems?
No, the product requires express written approval from Fairchild for use within life support devices or systems.
How should power dissipation be derated if operating above 25°C?
Power dissipation must be de-rated at a rate of 0.8 W/°C.