Fairchild FDB039N06 Specifications
Summary
This high-performance N-Channel PowerTrench MOSFET is engineered for robust, efficient power conversion in demanding applications such as DC/DC converters and synchronous rectifiers. The accompanying technical manual provides comprehensive data covering electrical characteristics, maximum current ratings (up to 174A), thermal metrics, switching performance curves, and deep application insights. This guide is essential for power electronics engineers and designers who require reliable components for compact, high-power management systems.
Page 1 Text Content
039N 06 N -C an el P er T ren ch
July 2009
FDB039N06 N-Channel Power Trench® MOSFET 60V, 174A, 3.9mΩ Features General Description RDS(on) = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that has been
Fast Switching Speed
especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Low Gate Charge
High Performance Trench Technology for Extremely Low RDS(on)
Application
High Power and Current Handling Capability
DC to DC convertors / Synchronous Rectification
Ro HS Compliant
MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±20
-Continuous (TC = 25o C, Silicion Limited) 174*
ID Drain Current 123* A-Continuous (TC = 100o C, Silicion Limited)
-Continuous (TC = 25o C, Package Limited)
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 1.54 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.65
RθJA Thermal Resistance, Junction to Ambient 62.5
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDB039N06 Rev. A
Page Summary Contents For Fairchild FDB039N06 Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 538.62 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What is the maximum Drain to Source Breakdown Voltage (VDSS) rating?
The Drain to Source Voltage rating is 60 V.
Can this MOSFET handle high continuous current loads?
Yes, it has a continuous drain current capacity of 174 A at T = 25°C.
Where should I purchase this component to guarantee authenticity and warranty coverage?
Product must be purchased directly from Fairchild or through Authorized Fairchild Distributors.