FAIRCHILD FDN371N Datasheet User Manual

FD 371N

September 2001

FDN371N 20V N-Channel Power Trench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high

• 2.5 A, 20 V. RDS(ON) = 50 mΩ @ VGS = 4.5 V

voltage Power Trench process. It has been optimized for

RDS(ON) = 60 mΩ @ VGS = 2.5 V

power management applications.

Applications

• Low gate charge (7.6 n C typical)

• Load switch

• Fast switching speed

• Battery protection • Power management

• High performance trench technology for extremely low RDS(ON)

Super SOT -3TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ± 12 ID Drain Current – Continuous (Note 1a) 2.5

– Pulsed

Power Dissipation for Single Operation (Note 1a) 0.5PD

(Note 1b) 0.46

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

FDN371N 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation FDN371N Rev C (W)