Fairchild FDB52N20 Datasheet

Summary

The FDB52N20 is a high-performance 200V N-Channel MOSFET designed for demanding power electronics applications. Built with advanced DMOS technology, it provides extremely low on-state resistance and superior switching capabilities crucial for high-efficiency switched-mode power supplies (SMPS) and active power factor correction (PFC). This technical manual provides comprehensive reference specifications, including detailed electrical characteristics, thermal performance graphs, absolute maximum ratings, and reliable data necessary for engineers designing robust, high-power conversion systems.

FDB52N20
200V N-Channel MOSFET
- 200
- V
- 52
- 33
- A
- A
- 208
- A
- ±30
- V
- 2520
- mJ
- 52
- A
- 35.7
- mJ
- 4.5
- V/ns
- 357
- 2.86
- W
- W/°C
- -55 to +150
- °C
- 300
- °C
- --
- 0.35
- °C/W
- --
- 40
- °C/W
- --
- 62.5
- °C/W
- FDB52N20
- FDB52N20TM
- D2-PAK
- 330mm
- 24mm
- 800
- 200
- --
- --
- V
- --
- 0.2
- --
- V/°C
- --
- --
- --
- --
- 1
- 10
- mA
- mA
- --
- --
- 100
- nA
- --
- --
- -100
- nA
- 3.0
- --
- 5.0
- V
- --
- 0.041
- 0.049
- W
- --
- 35
- --
- S
- --
- 2230
- 2900
- pF
- --
- 540
- 700
- pF
- --
- 66
- 100
- pF
- --
- 53
- 115
- ns
- --
- 175
- 359
- ns
- --
- 48
- 107
- ns
- --
- 29
- 68
- ns
- --
- 49
- 63
- nC
- --
- 19
- --
- nC
- --
- 24
- --
- nC
- --
- --
- 52
- A
- --
- --
- 204
- A
- --
- --
- 1.4
- V
- --
- 162
- --
- ns
- --
- 1.3
- --
- mC

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Page 1 Text Content

52N 20 200V -C an el M

July 2008

Uni FETTM

FDB52N20 200V N-Channel MOSFET Features Description 52A, 200V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

Low gate charge ( typical 49 n C)

DMOS technology.

Low Crss ( typical 66 p F)

This advanced technology has been especially tailored to mini-

Fast switching mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

100% avalanche tested

commutation mode. These devices are well suited for high effi-

Improved dv/dt capability cient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings Symbol Parameter FDB52N20 Unit VDSS Drain-Source Voltage

ID Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source voltage ±30

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1)

EAR Repetitive Avalanche Energy (Note 1) 35.7 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 2.86 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case 0.35 °C/W

RθJA* Thermal Resistance, Junction-to-Ambient* °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

Page Summary Contents For Fairchild FDB52N20 Datasheet

Page 1 52N 20 200V -C an el M July 2008 Uni FETTM FDB52N20 200V N-Channel MOSFET Features Description 52A, 200V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors...

Page 2 52N 20 200V -C an el M Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB52N20 FDB52N20TM D2-PAK 330mm 24mm Electrical Characteristics TC = 25°C u...

Page 3 52N 20 200V -C an el M Typical Performance Characteristics ap ac ita nc es [p (O ) [ , D ra in ur re nt [A ra in -S ou rc n- es is ta nc Figure 1. On-Region Characteristics Figure 2. Transfer Characte...

Page 4 52N 20 200V -C an el M Typical Performance Characteristics (Continued) , D ra in ur re nt [A , ( or al iz ed ra in -S ou rc re ak do ol ta ge Figure 7. Breakdown Voltage Variation Figure 8. On-Resista...

Page 5 52N 20 200V -C an el M Gate Charge Test Circuit & Waveform Same Type as DUT Qgs Qgd Charge Resistive Switching Test Circuit & Waveforms VDS VDS 90% VGS RG 10% VGS td(on) tr td(off) on off Uncl...

Page 6 52N 20 200V -C an el M Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver RG Same Type as DUT VDD dv/dt controlled by RG ISD controlled by pulse period Gate Pulse Width VGS D = Gate Pulse P...

Page 7 52N 20 200V -C an el M Mechanical Dimensions D2-PAK www.fairchildsemi.com FDB52N20 Rev. A

Page 8 52N 20 200V -C an el M TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended...

Manual Details

Brand	Fairchild
Pages	8
File Size	937.51 KB
Published	July 12, 2026

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