Fairchild FDA20N50F datasheet
Summary
This advanced N-Channel MOSFET is a high-efficiency power semiconductor engineered for demanding applications requiring superior switching capabilities and maximum current handling. This comprehensive technical manual provides detailed data on electrical characteristics, thermal management, turn-on/turn-off times, and avalanche ratings. It is essential documentation for power electronics designers developing active PFC units, switched mode power supplies (SMPS), and industrial circuits that require reliable and robust performance under dynamic operating conditions.
Page 1 Text Content
FD 20N 50F N -C hannel M SFET
January 2012
Uni FET TM
FDA20N50F
N-Channel MOSFET 500V, 22A, 0.26Ω Features Description RDS(on) = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
Low gate charge ( Typ. 50n C )
stripe, DMOS technology.
Low Crss ( Typ. 27p F )
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching
Fast switching
performance, and withstand high energy pulse in the avalanche
100% avalanche tested and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
Improved dv/dt capability
correction.
Ro HS compliant
TO-3PN
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter Ratings Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
-Continuous (TC = 25o C)
ID Drain Current
-Continuous (TC = 100o C)
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 3.1 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Min. Max. Units RθJC Thermal Resistance, Junction to Case - 0.44
o C/WRθCS
Thermal Resistance, Case to Sink 0.24 RθJA Thermal Resistance, Junction to Ambient -
©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDA20N50F Rev.C0
Page Summary Contents For Fairchild FDA20N50F datasheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 372.79 KB |
| Published | June 16, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the maximum drain-to-source voltage for the FDA20N50F MOSFET?
The maximum drain-to-source voltage (V_DSS) is 500V.
What is the typical gate charge for switching applications?
The typical total gate charge (Q_g(tot)) at 10V is 50nC.
How does power dissipation derate with increasing temperature?
Power dissipation derates above 25°C at 3.1W/°C.
What is the peak diode recovery dv/dt capability?
The peak diode recovery dv/dt is rated at 20V/ns under specified conditions.