FAIRCHILD 2N7002T datasheet
Summary
This product manual details the 2N7002T N-Channel Enhancement Mode Field Effect Transistor. It covers technical specifications, electrical characteristics, and package dimensions for this surface mount component. It is designed for engineers and electronics hobbyists requiring a component with low on-resistance and fast switching speeds for circuit design and prototyping.
Page 1 Text Content
2N 7002T — -C hannel Enhancem ent M ode Field Effect Transistor
October 2007
2N7002T N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/Ro HS Compliant
SOT - 523F Marking : AA
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage RGS ≤ 1.0MΩ 60 VGSS Gate-Source Voltage Continuous ±20
Pulsed ±40
ID Drain Current Continuous
Continuous @ 100°C m A Pulsed
TJ Junction Temperature °C TSTG Storage Temperature Range -55 to +150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation m W
Derating above TA = 25°C 1.6 m W/°C
RθJA Thermal Resistance, Junction to Ambient * °C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
© 2 007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7 002T Rev. A
Page Summary Contents For FAIRCHILD 2N7002T datasheet
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 6 |
| File Size | 332.46 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current rating?
The maximum continuous drain current is 115 mA at 25°C, derating to 73 mA at 100°C.
What is the typical gate threshold voltage?
The typical gate threshold voltage (V_GS(th)) is 1.76 volts, with a range from 1.0 to 2.0 volts.
What is the maximum power dissipation for this transistor?
The maximum total device power dissipation is 200 mW when mounted on a specified PCB.
What is the typical on-resistance (R_DS(on)) at a 10V gate drive?
The typical static drain-source on-resistance is 2.53 ohms at V_GS = 10V, I_D = 0.5A, and Tj = 125°C.