Fairchild RUR1S1560S 15A, 600V Ultrafast Diode Datasheet

RUR1S1560S

Data Sheet September 2002

15A, 600V Ultrafast Diode Features The RUR1S1560S is an ultrafast diode (trr 55ns) with soft Ultrafast Recovery . . . . . . . . . . . . . . . . . . . . . . . . trr < 55ns

[ /Title

recovery characteristics. It has low forward voltage drop and

(HUF7 Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175o C

is of silicon nitride passivated ion-implanted, epitaxial planar

construction. Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

This device is intended for use as freewheeling/clamping Avalanche Energy Rated

HUF76

diode and rectifier in a variety of switching power supplies

and other power switching applications. Its low stored charge Applications

and ultrafast soft recovery minimizes ringing and electrical

Switching Power Supplies

/Sub- noise in many power switching circuits, thus reducing power

loss in the switching transistor. Power Switching Circuits

(20A, General Purpose

Formerly developmental type TA9905.

Packaging

0.022 Ordering Information

JEDEC TO-263

Ohm, PART NUMBER PACKAGE BRAND N- CATHODE

RUR1S1560S TO-263 RUR1560

(FLANGE)

Chan-

NOTE: When ordering, use the entire part number. Add the suffix 9A

nel, to obtain the TO-263 variant in tape and reel, i.e. RUR1S1560S9A. Logic CATHODE

Level Symbol ANODE

Power MOS- FETs) /Autho r () /Key- words

Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified

(Inter-

SYMBOL PARAMETER RUR1S1560S UNITS

VRRM Peak Repetitive Reverse Voltage

Semi-

VRWM Working Peak Reverse Voltage

VR DC Blocking Voltage

ductor, IF(AV) Average Rectified Forward Current

N- IFRM Repetitive Peak Surge Current (20k Hz Square Wave) IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Chan-

PD Power Dissipation 100

EAVL Avalanche Energy (1A, 40m H) m J

Logic o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Level

Maximum Temperature for Soldering

Ultra F TL Leads at 0.063in (1.6mm) from Case for 10s

Tpkg Package Body for 10s, See Techbrief TB334

THERMAL SPECIFICATIONS

Power o C/W

RθJC Thermal Resistance Junction to Case 1.5

MOS- o C/W

RθJA Thermal Resistance Junction to Ambient

NOTES: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

RUR1S1560S Rev. A1©2002 Fairchild Semiconductor Corporation