Fairchild FDA24N40F datasheet

FD 24N 40F N -C hannel M SFET

December 2007

Uni FETTM

FDA24N40F

N-Channel MOSFET, FRFET 400V, 23A, 0.19Ω Features Descripition RDS(on) = 0.15Ω ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

Low gate charge (Typ. 46n C)

DMOS technology. Low Crss (Typ.25p F) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

Fast switching performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

100% avalanche tested

efficient switched mode power supplies and active power factor Improved dv/dt apability correction.

Ro HS compliant

TO-3PN

MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter Ratings Units

VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30

-Continuous (TC = 25o C)

ID Drain Current

-Continuous (TC = 100o C) 13.8

IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 23.5 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

(TC = 25o C)

PD Power Dissipation

- Derate above 25o C 1.8 W/o C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter Min. Max. Units RθJC Thermal Resistance, Junction to Case - 0.53

o C/WRθCS

Thermal Resistance, Case to Sink Typ. 0.24 RθJA Thermal Resistance, Junction to Ambient -

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDA24N40F Rev. A