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Fairchild FDD6796A FDU6796A_ F071 Specifications

Summary

This high-efficiency N-Channel PowerTrench MOSFET is engineered for reliable performance in DC/DC conversion applications, making it ideal for Vcore supplies and VRMs used in servers and desktop computers. Designed with optimized low gate charge and fast switching capabilities, the device features exceptional on-resistance ($R_{DS(on)}$). The accompanying datasheet provides extensive coverage of key electrical parameters, including maximum ratings (voltage, current), thermal characteristics, and detailed switching performance data required for professional power circuit design.

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FD 6796A / FD 679A _F071 N -C hannel Pow er T rench SFET

March 2009

FDD6796A / FDU6796A_F071 N-Channel Power Trench® MOSFET 25 V, 5.7 mΩ Features General Description

Max r DS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either

Max r DS(on) = 15.0 mΩ at VGS = 4.5 V, ID = 15.2 A

synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast

100% UIL tested

switching speed.

Ro HS Compliant

Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture

Short-Lead I-PAK

D-PAK (TO-251AA) (TO-252)

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C 40 -Continuous (Silicon limited) TC = 25 °C

-Continuous TA = 25 °C (Note 1a) -Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C

Power Dissipation TA = 25 °C (Note 1a) 3.7

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 3.6

RθJA Thermal Resistance, Junction to Ambient (Note 1a)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6796A FDD6796A D-PAK (TO-252) 13 ’’ 12 mm 2500 units FDU6796A FDU6796A_F071 TO-251AA N/A(Tube) N/A 75 units

©20 09 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FD D6796A / FDU6796A_F071 Rev.C1

Page Summary Contents For Fairchild FDD6796A FDU6796A_ F071 Specifications

Page 1 FD 6796A / FD 679A _F071 N -C hannel Pow er T rench SFET March 2009 FDD6796A / FDU6796A_F071 N-Channel Power Trench® MOSFET 25 V, 5.7 mΩ Features General Description Max r DS(on) = 5.7 mΩ at VGS = 10 ...
Page 2 FD 6796A / FD 679A _F071 N -C hannel Pow er Trench SFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain ...
Page 3 FD 6796A / FD 679A _F071 N -C hannel Pow er Trench SFET Typical Characteristics TJ = 25 °C unless otherwise noted LI ZE , D IN EN (A IN -R ES IS TA , D IN EN (A VGS = 8 V PULSE DURATION = 80 µs VGS = ...
Page 4 FD 6796A / FD 679A _F071 N -C hannel Pow er Trench SFET Typical Characteristics TJ = 25 °C unless otherwise noted , D IN EN (A VA LA EN (A S, S, TE VO LT (V ID = 20 A VDD = 10 V VDD = 13 V VDD = 16 V ...
Page 5 FD 6796A / FD 679A _F071 N -C hannel Pow er Trench SFET Typical Characteristics TJ = 25 °C unless otherwise noted LI ZE ER LI ZE ER IM PE E, θJ IM PE E, θJ DUTY CYCLE-DESCENDING ORDER 0.1 PDM NOTES: D...
Page 6 FD 6796A / FD 679A _F071 N -C hannel Pow er Trench SFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global s...

Manual Details

Brand Fairchild
Pages 6
File Size 319.72 KB
Published July 12, 2026
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Frequently Asked Questions

What are the primary recommended applications for this N-Channel MOSFET?

It is designed for Vcore DC-DC converters in desktop computers/servers, and various Intermediate Bus Architecture VRM circuits.

Which sources guarantee that I am purchasing a genuine part?

Purchase directly from Fairchild or from Authorized Fairchild Distributors to receive full traceability and warranty support.

What are the key electrical characteristics optimized in this MOSFET's design?

It is optimized for low gate charge, extremely low $ ext{R}_{ ext{DS}( ext{on})}$, and fast switching speed.

How is thermal resistance ($ heta_{ ext{JA}}$) determined during installation?

It depends on the board's design, specifically referencing copper pads and the mounting surface configuration.