Fairchild FDD6780A FDU6780A_ F071 User Guide
Summary
Optimize your power conversion efficiency with this N-Channel Power Trench MOSFET. Engineered for superior performance, it features ultra-low on-resistance and fast switching characteristics crucial for advanced DC/DC converters. This component is ideal for implementing Virtual Regulator Modules (VRMs) and Vcore applications in high-density systems, such as servers and desktop computers. The associated manual provides electrical specifications, thermal ratings, and detailed parameters necessary for design engineers to ensure optimal system efficiency and reliable operation within intermediate bus architectures.
Page 1 Text Content
FD 6780A / FD 6780A _F071 N -C hannel Pow er Trench SFET
January 2009
FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET 25 V, 8.6 mΩ Features General Description
Max r DS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
Max r DS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A
synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast
100% UIL test
switching speed.
Ro HS Compliant
Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
Short-Lead I-PAK
D-PAK (TO-251AA) (TO-252)
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units
VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C 30 -Continuous (Silicon limited) TC = 25 °C
-Continuous TA = 25 °C (Note 1a) 16.4
-Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C 32.6
Power Dissipation TA = 25 °C (Note 1a) 3.7
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case TO-252, TO-251 4.6
RθJA Thermal Resistance, Junction to Ambient TO-252 (Note 1a) 40
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6780A FDD6780A D-PAK (TO-252) 13 ’’ 12 mm 2500 units FDU6780A FDU6780A_F071 TO-251AA N/A(Tube) N/A 75 units
©2009 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDD6780A / FDU6780A_F071 Rev.C
Page Summary Contents For Fairchild FDD6780A FDU6780A_ F071 User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 7 |
| File Size | 331.27 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What are the recommended applications for this MOSFET?
It is designed for Vcore DC-DC in desktops/servers and VRM for Intermediate Bus Architecture.
What is the maximum continuous drain current (Package limited)?
At 25°C, the continuous drain current is rated at 30 A.
How does junction temperature affect performance?
The operating junction temperature range is from -55 to +175 °C.
What are the thermal resistance values for mounting on a PCB?
The Junction to Case (TO-252) thermal resistance is 4.6 °C/W, and Junction to Ambient (TO-252) is listed at 40 °C/W.