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Fairchild FDD86110 User Guide

Summary

This advanced N-Channel Power Trench MOSFET is a high-efficiency semiconductor component designed for demanding power electronics applications, such as DC-DC Conversion systems. Engineered to minimize on-state resistance while maintaining superior switching performance, it boosts system reliability and efficiency. The accompanying manual provides comprehensive technical details, covering electrical characteristics, thermal management guidelines, and application ratings necessary for professional engineers and designers building robust power conversion circuits.

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FD 86110 N -C hannel Pow er Trench SFET

October 2011

FDD86110 N-Channel Power Trench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description

This N-Channel MOSFET is produced using Fairchild

Max r DS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A

Semiconductor‘s advanced Power Trench® process that has

Max r DS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A

been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

100% UIL tested

Ro HS Compliant

Application DC - DC Conversion

TO -252D-PAK (TO-252)

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units

VDS Drain to Source Voltage VGS Gate to Source Voltage ±20 Drain Current -Continuous (Package limited) TC = 25 °C 50 -Continuous (Silicon limited) TC = 25 °C

-Continuous TA = 25 °C (Note 1a) 12.5

-Pulsed EAS Single Pulse Avalanche Energy (Note 3) m J Power Dissipation TC = 25 °C

Power Dissipation TA = 25 °C (Note 1a) 3.1

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

RθJC Thermal Resistance, Junction to Case 0.98

RθJA Thermal Resistance, Junction to Ambient (Note 1a)

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD86110 FDD86110 D-PAK(TO-252) 13 ’’ 12 mm 2500 units

©2 011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FD D86110 Rev.C

Page Summary Contents For Fairchild FDD86110 User Guide

Page 1 FD 86110 N -C hannel Pow er Trench SFET October 2011 FDD86110 N-Channel Power Trench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max r D...
Page 2 FD 86110 N -C hannel Pow er Trench SFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakd...
Page 3 FD 86110 N -C hannel Pow er Trench SFET LI ZE Typical Characteristics TJ = 25 °C unless otherwise noted , D IN EN (A IN -R ES IS TA , D IN EN (A VGS = 6 V VGS = 5.5 V VGS = 4.5 V VGS = 5 V PULSE DURAT...
Page 4 FD 86110 N -C hannel Pow er Trench SFET Typical Characteristics TJ = 25 °C unless otherwise noted , D IN EN (A S, VA LA EN (A TE VO LT (V ID = 12.5 A VDD = 50 V VDD = 25 V VDD = 75 V f = 1 MHz VGS = 0...
Page 5 FD 86110 N -C hannel Pow er Trench SFET Typical Characteristics TJ = 25 °C unless otherwise noted LI ZE ER IM PE E, θJ DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 PDM 0.05 SINGLE PULSE t2 RθJC = 0.98 ...
Page 6 FD 86110 N -C hannel Pow er Trench SFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and...

Manual Details

Brand Fairchild
Pages 6
File Size 252.18 KB
Published May 31, 2026
32 views

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Frequently Asked Questions

What is the maximum continuous drain current (ID) rating?

The Drain Current can be up to 12.5 A continuously, limited by the silicon.

Are these parts counterfeit-resistant?

Fairchild encourages purchasing parts directly or from Authorized Fairchild Distributors for guaranteed genuine components and traceability.