Fairchild FDB12N50F User Guide
Summary
This high-performance N-Channel MOSFET uses planar DMOS technology, providing excellent switching characteristics and ultra-low on-state resistance ($\text{R}_\text{DS(on)}$). It is engineered for demanding power applications requiring high efficiency, such as active power factor correction (PFC) circuits and switched-mode power supplies. The accompanying documentation offers comprehensive technical specifications, covering all necessary electrical, thermal, and dynamic parameters required by professional engineers for precise application design and reliable integration.
Page 1 Text Content
FD 12N 50F N -C hannel M SFET
February 2012
Uni FET TM
FDB12N50F
N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Ω Features Description RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
Low gate charge ( Typ. 21n C)
DMOS technology.
Low Crss ( Typ. 11p F)
This advance technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor-
Fast switching
mance, and withstand high energy pulse in the avalanche and
100% avalanche tested commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
Improve dv/dt capability
correction.
Ro HS compliant
D2-PAK TO-263AB FDB Series
MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings Units
VDSS Drain to Source Voltage VGSS Gate to Source Voltage ±30
-Continuous (TC = 25o C) 11.5
ID Drain Current
-Continuous (TC = 100o C) 6.9
IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 11.5 EAR Repetitive Avalanche Energy (Note 1) 16.5 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 1.33 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.75
RθJA Thermal Resistance, Junction to Ambient 62.5
©2012 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDB12N50F Rev.C0
Page Summary Contents For Fairchild FDB12N50F User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 371.53 KB |
| Published | May 30, 2026 |
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