FAIRCHILD BS270 User Guide

April 1995

BS270 N-Channel Enhancement Mode Field Effect Transistor

General Description Features These N-Channel enhancement mode field effect transistors 400m A, 60V. RDS(ON) = 2Ω @ VGS = 10V. are produced using Fairchild's proprietary, high cell density,

High density cell design for low RDS(ON).

DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, Voltage controlled small signal switch. and fast switching performance. They can be used in most

Rugged and reliable.

applications requiring up to 500m A DC. These products are particularly suited for low voltage, low current applications such High saturation current capability. as small servo motor control, power MOSFET gate drivers, and other switching applications.

Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS270 Units VDSS Drain-Source Voltage

VDGR Drain-Gate Voltage (RGS < 1MΩ)

VGSS Gate-Source Voltage - Continuous ±20

- Non Repetitive (tp < 50µs) ±40

ID Drain Current - Continuous 400 m A

- Pulsed

PD Maximum Power Dissipation m W

Derate Above 25°C m W/°C

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

TL Maximum Lead Temperature for Soldering °C Purposes, 1/16" from Case for 10 Seconds

THERMAL CHARACTERISTICS

RθJA Thermal Resistacne, Junction-to-Ambient °C/W

© 1997 Fairchild Semiconductor Corporation BS270.SAM