Fairchild FQPF7N20L User Guide
Summary
The FQPF7N20L is a high-performance N-Channel power MOSFET designed for demanding switching applications, rated at 200V and 5.0A. Featuring advanced DMOS technology with low gate charge and improved heat dissipation capabilities, it ensures superior operational efficiency in complex circuits. This document provides exhaustive technical data, including absolute maximum ratings, comprehensive electrical characteristics, and dynamic switching performance curves. It is ideally suited for engineers designing high-efficiency DC/DC converters, switch mode power supplies (SMPS), and advanced motor control systems requiring reliable, fast-switching solid-state components.
Page 1 Text Content
December 2000
QFETTM
FQPF7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 6.8 n C) planar stripe, DMOS technology. Low Crss ( typical 8.5 p F) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation modes. These devices are
Low level gate drive requirement allowing direct
well suited for high efficiency switching DC/DC converters,
operation from logic drivers
switch mode power supplies, and motor control.
SD TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQPF7N20L Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 5.0
- Continuous (TC = 100°C) 3.16
IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage ± 20 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) 5.0 EAR Repetitive Avalanche Energy (Note 1) 3.7 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8” from case for 5 seconds
Thermal Characteristics Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case 3.38 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W
©2000 Fairchild Semiconductor International Rev. A2, December 2000
Page Summary Contents For Fairchild FQPF7N20L User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 562.81 KB |
| Published | May 31, 2026 |
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Frequently Asked Questions
What is the continuous drain current at 25°C?
The maximum continuous drain current (IDSS) at 25°C is 5.0 A.
Is this MOSFET suitable for various switching applications?
Yes, it is suited for high efficiency DC/DC converters, logic drivers, and motor control.
What must I check regarding overheating or environmental stress?
The operating temperature range is -55 to +150 °C. Remember to derate power above 25°C.
How resistant is the component during fast switching events?
It has an improved dv/dt capability and superior switching performance optimized by its advanced planar stripe DMOS technology.