Fairchild FDB031N08 User Guide
Summary
A high-performance N-Channel MOSFET, ideal for robust power applications such as DC/DC converters and synchronous rectifiers. Featuring advanced PowerTrench technology, this component delivers superior switching speed and ultra-low on-state resistance (2.4 mΩ typ.) while handling up to 235A of continuous current. This manual provides technical designers with comprehensive specifications, including detailed electrical characteristics, thermal ratings, and performance curves needed for integrating high-efficiency, reliable power solutions into sophisticated electronic circuits.
Page 1 Text Content
FD 031N 08 N -C hannel Pow er Trench SFET
July 2008
FDB031N08
N-Channel Power Trench® MOSFET 75V, 235A, 3.1mΩ Features Description RDS(on) = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced Power Trench process that has been espe-
Fast switching speed
cially tailored to minimize the on-state resistance and yet
Low gate charge
maintain superior switching performance.
High performance trench technology for extremely low RDS(on)
Application
High power and current handling capability
DC to DC convertors / Synchronous Rectification
Ro HS compliant
D2-PAK FDB Series G
MOSFET Maximum Ratings TC = 25o C unless otherwise noted* Symbol Parameter FDB031N08 Units VDSS Drain to Source Voltage
VGSS Gate to Source Voltage ±20
Drain Current - Continuous (TC = 25o C, Silicon Limited) 235*
ID - Continuous (TC = 100o C, Silicon Limited) 165* - Continuous (TC = 25o C, Package Limited) IDM Drain Current - Pulsed (Note 1) EAS Single Pulsed Avalanche Energy (Note 2) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
(TC = 25o C)
PD Power Dissipation
- Derate above 25o C 2.5 W/o C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering Purpose, o C
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.4
RθJA Thermal Resistance, Junction to Ambient 62.5
©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDB031N08 Rev. A3
Page Summary Contents For Fairchild FDB031N08 User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 722.44 KB |
| Published | May 20, 2026 |
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Frequently Asked Questions
What is the nominal Drain-Source On Resistance (RDS(on))?
The typical value is 2.4 mΩ @ V = 10V, I = 75A.
What current limits apply to continuous drain operation at different temperatures?
At 25°C, the limit is 235A (Silicon Limited). At 100°C, it is 165A (Silicon Limited).
What is the operating temperature range for this MOSFET?
The specified operating and storage temperature range is -55 to +175 °C.
How does Power Dissipation change with ambient temperature?
Power dissipation must be derated above 25°C at a rate of 2.5 W/°C.