Fairchild FDC658AP User Guide
Summary
This high-performance P-Channel Logic Level MOSFET utilizes advanced PowerTrench technology for superior power handling. Optimized specifically for battery management and load switch applications, it delivers extremely low on-resistance ($R_{ds(on)}$), ensuring efficient DC/DC conversion circuits. The technical manual provides comprehensive documentation, including absolute maximum ratings, thermal characteristics, electrical specifications, and switching details needed by power electronics engineers designing reliable, high-efficiency systems.
Page 1 Text Content
658A in le P -C an el L ic L evel P er T ren ch
November 2011
FDC658AP Single P-Channel Logic Level Power Trench® MOSFET -30V, -4A, 50m General Description Features This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced Power Trench process. It has been Max r DS(on) = 50 m @ VGS = -10 V, ID = -4A
optimized for battery power management applications.
Max r DS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A
Applications
Low Gate Charge
Battery management High performance trench technology for extremely low r DS(on)
Load switch
Ro HS Compliant
Battery protection
DC/DC conversion
PIN 1
Super SOTTM-6
Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -30
VGS Gate-Source Voltage Drain Current - Continuous (Note 1a) -4
- Pulsed -20
Maximum Power dissipation (Note 1a) 1.6
(Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) °C/W
RJC Thermal Resistance, Junction-to-Case (Note 1) °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity
.58A FDC658AP 7inch 8mm 3000 units
©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com1 FDC658AP Rev. B1
Page Summary Contents For Fairchild FDC658AP User Guide
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 5 |
| File Size | 133.59 KB |
| Published | May 28, 2026 |
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