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AD MAT03 Low Noise, Matched Dual PNP Transistor Data Sheet User Manual

Summary

The MAT03 is a high-precision, dual monolithic PNP transistor designed for demanding analog applications. Featuring exceptionally low noise ($1 \text{ nV}/\sqrt{\text{Hz}}$), minimal offset voltage, and tight matching (3% max), it is ideal for preamplifiers, current mirrors, and precision circuits requiring reliable logarithmic conformance. This manual provides comprehensive electrical characterizations, including detailed specifications for gain, leakage currents, and temperature stability, allowing engineers to ensure optimal performance across wide operational ranges.

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Low Noise, Matched Dual PNP Transistor MAT03

FEATURES PIN CONNECTION Dual Matched PNP Transistor

TO-78

Low Offset Voltage: 100 V Max

(H Suffix)

Low Noise: 1 n V/√Hz @ 1 k Hz Max High Gain: 100 Min High Gain Bandwidth: 190 MHz Typ Tight Gain Matching: 3% Max Excellent Logarithmic Conformance: r BE  0.3  typ

GENERAL DESCRIPTION Each transistor is individually tested to data sheet specifications. The MAT03 dual monolithic PNP transistor offers excellent Device performance is guaranteed at 25°C and over the extended parametric matching and high frequency performance. Low industrial and military temperature ranges. To ensure the long- noise characteristics (1 n V/√Hz max @ 1 k Hz), high bandwidth term stability of the matching parameters, internal protection

(190 MHz typical), and low offset voltage (100 µV max), makes diodes across the base-emitter junction clamp any reverse base- the MAT03 an excellent choice for demanding preamplifier appli- emitter junction potential. This prevents a base-emitter breakdown cations. Tight current gain matching (3% max mismatch) and condition that can result in degradation of gain and matching high current gain (100 min), over a wide range of collector cur- performance due to excessive breakdown current.

rent, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ω) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.

REV. Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties that One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. may result from its use. No license is granted by implication or otherwise Tel: 781/329-4700 www.analog.com

under any patent or patent rights of Analog Devices. Fax: 781/326-8703 © Analog Devices, Inc., 2002

Page Summary Contents For AD MAT03 Low Noise, Matched Dual PNP Transistor Data Sheet User Manual

Page 1 Low Noise, Matched Dual PNP Transistor MAT03 FEATURES PIN CONNECTION Dual Matched PNP Transistor TO-78 Low Offset Voltage: 100 V Max (H Suffix) Low Noise: 1 n V/√Hz @ 1 k Hz Max High Gain: 100 Min Hi...
Page 2 MAT03–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ TA = 25C, unless otherwise noted.) MAT03E MAT03F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit Current Gain1 h FE VCB = 0 V, –36 V IC = 1...
Page 3 MAT03 ORDERING GUIDE ABSOLUTE MAXIMUM RATINGS1 Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . 36 V VOS max Temperature Package Collector-Emitter Voltage (BVCEO) . . . . . . . . ....
Page 4 MAT03 –Typical Performance Characteristics TPC 1. Current Gain vs. TPC 2. Current Gain TPC 3. Gain Bandwidth vs. Collector Current vs. Temperature Collector Current TPC 4. Base-Emitter Voltage TPC 5. ...
Page 5 MAT03 Saturation Voltage TPC 8. Noise Voltage Density TPC 9. Noise Voltage Density TPC 7. vs. Collector Current vs. Frequency TPC 10. Total Noise vs. Collector Current TPC 11. Collector-Base Capacitan...
Page 6 MAT03 Figure 1. SPICE or SABER Model APPLICATIONS INFORMATION MAT03 NOISE MEASUREMENT 2 = 4k TBR, or MAT03 MODELS All resistive components (Johnson noise, en The MAT03 model (Figure 1) includes parasi...
Page 7 MAT03 to bias each side of the differential pair. The 5 kΩ collector surement circuit must be thermally isolated. Effects of extraneous resistors noise contribution is insignificant compared to the vo...
Page 8 MAT03 This amplifier exhibits excellent full power ac performance, and the VBE of a silicon transistor is predictable and constant (to 0.08% THD into a 600 Ω load, making it suitable for exacting a fe...
Page 9 MAT03 Q2 and Q3 are in series and operate at the same current levels so Since Q2 buffers Q3, both transistors in the MAT03, Q1 and Q3, the total output impedance is: maintain the same collector curren...
Page 10 MAT03 The full-scale output of the DAC08, IOUT, is a linear function of IREF IFR = × IREF, and IOUT + IOUT = IREF The current mirror output is IOUT – IOUT = 1, so that if IREF = 2 m A: I = 2 IOUT – 1....
Page 11 MAT03 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). TO-78 Metal Can REFERENCE PLANE 0.750 (19.05) 0.500 (12.70)0.185 (4.70) 0.165 (4.19) 0.250 (6.35) MIN 0.100 (2.54) BSC 0.050 (1.27) MAX 0....
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