Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Data Handbook
Summary
The SSM3J13T is a high-performance Power Management Switch fabricated using silicon technology, optimized for demanding high-speed switching applications by offering industry-leading low on-resistance. This technical manual provides comprehensive electrical specifications, detailed maximum ratings, and essential handling precautions necessary for proper integration into circuit designs. It is designed for professional engineers and system developers building general electronics equipment, including industrial machinery, consumer products, and advanced measuring instruments.
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SSM3J13T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J13T
Power Management Switch
Unit: mm
High Speed Switching Applications
Small Package Low on Resistance : Ron = 70 mΩ (max) (@VGS = −4 V) : Ron = 95 mΩ (max) (@VGS = −2.5 V) Low Gate Threshold Voltage
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS 12 V Gate-Source voltage VGSS 8 V
DC ID 3.0
Drain current IDP
Pulse 6.0
(Note 2) PD
Drain power dissipation 1.25 W
JEDEC ―
(Note 1)
Channel temperature Tch 150 C JEITA ―
Storage temperature range Tstg 55~150 C TOSHIBA 2-3S1A
Note 1: Mounted on FR4 board Weight: 10 mg (typ.)
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm2, t 10 s) Note 2: The pulse width limited by max channel temperature.
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account
Page Summary Contents For Toshiba TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J13T Data Handbook
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 6 |
| File Size | 170.01 KB |
| Published | July 22, 2026 |
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Frequently Asked Questions
What is the recommended gate voltage (V_GS) for proper operation?
A recommended operating voltage of 2.5 V or higher is required to turn on this product.
What precautions must be taken when handling unmounted devices?
Operators must wear anti-static clothing, and containers and all objects touching the device must be anti-static materials (ESD protection).
What factors impact the drain power dissipation (P_D)?
Power dissipation depends on board material, board area, board thickness, pad area, and the general environment of use.