Toshiba Field Effect Transistor Silicon N Channel MOS Type (High speed U- MOSIII) TPC8010-H Data Sheet
Summary
This high-speed N Channel MOS Field Effect Transistor is engineered for demanding power conversion applications, offering low drain-source resistance (Rds(ON)) and small gate charge while maintaining a compact footprint. Ideal for portable equipment and notebook PC designs that require efficient DC-DC conversion. This manual provides comprehensive technical specifications, including electrical and thermal characteristics ratings up to 30V/150°C, ensuring selection and proper application of the component in general electronic systems.
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TPC8010-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8010-H
DC-DC Converters
Unit: mm
Notebook PC Applications Portable Equipment Applications
• Small footprint due to small and thin package • High speed switching • Small gate charge: Qg = 18 n C (typ.) • Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V JEDEC ―
DC (Note 1) ID 11 JEITA ―
Drain current
Pulse (Note 1) IDP 44
TOSHIBA 2-6J1B
Drain power dissipation (t = 10 s)
PD 1.9 W Weight: 0.080 g (typ.)
(Note 2a) Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b)
Circuit Configuration
Single pulse avalanche energy
EAS 157 m J
(Note 3)
Avalanche current IAR 11 A Repetitive avalanche energy
EAR 0.19 m J
(Note 2a) (Note 4)
Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba Field Effect Transistor Silicon N Channel MOS Type (High speed U- MOSIII) TPC8010-H Data Sheet
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 334.88 KB |
| Published | May 31, 2026 |
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Frequently Asked Questions
What are the typical drain-source electrical specifications?
The low drain-source ON resistance (RDS(ON)) is typically 12 mΩ, and the high forward transfer admittance (|Y|) is typically 11 S.
What should be considered regarding device handling and safety?
This transistor is an electrostatic sensitive device and must be handled with caution. The buyer is responsible for complying with safety standards in system design to prevent injury or property damage.
What are the thermal dissipation limits under different conditions?
The drain power dissipation (t = 10s) can be 1.9 W on a glass-epoxy board (a) or 1.0 W on a glass-epoxy board (b).
Under what operating temperature range must the channel temperature remain below?
Note 1 specifies that devices must be used under conditions where the channel temperature is below 150°C.