Samsung SDRAM 64Mb H-die (x4, x8, x16) Data Manual, Datasheet, Specification Guide
Summary
This Samsung 64Mb H-die SDRAM specification document provides complete technical details for 4M x 4 2M x 8 and 1M x 16 bit synchronous dynamic random access memory integrated circuits fabricated using Samsung advanced CMOS process technology with enterprise-grade reliability and compatibility characteristics. Covers JEDEC standard 3.3V power supply voltage with LVTTL compatible input and output buffer interfaces for seamless integration with industry-standard memory controllers and system chipse
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
(Ro HS compliant)
Revision 1.3 August 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 August 2004
Page Summary Contents For Samsung SDRAM 64Mb H-die (x4, x8, x16) Data Manual, Datasheet, Specification Guide
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (Ro HS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products ...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM Revision History Revision 1.0 (September, 2003) • Finalized Revision 1.1 (October, 2003) Deleted speed -7C and AC parameter notes 5. Revision 1.2 (May, 2004) ...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address ...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM Package Physical Dimension 0.25 TYP 0.010 22.62 MAX 0.891 22.22 ± 0.10 0.21 ± 0.05 1.00 ± 0.10 1.20 MAX0.039 0.10 .7 6± 0. MAX 0.004 0. 3± 0. +0.10 0.05 0.71 ...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM FUNCTIONAL BLOCK DIAGRAM I/O ontrol utput B uffer Data Input Register ense A Bank Select Column Decoder Latency & Burst Length ow ecoder ol. B uffer Progr...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM PIN CONFIGURATION (Top view) x16 x8 x4 x16x8x4 VDD VDD VDD VSS VSS VSS DQ0 DQ0 N.C N.C DQ7 DQ15 VDDQ VDDQ VDDQ VSSQ VSSQ VSSQ DQ1 N.C N.C N.C N.C DQ14 DQ2 DQ1...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to VSS VDD, VDDQ -...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C for x4, x8) Version Parameter Symbol Test Condition Unit Note Burst...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C for x16 only) Version Parameter Symbol Test Condition Unit Note Bur...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit AC input levels (Vih/Vil) 2.4/0.4 Input timing measurement reference lev...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max Min Max CAS latency=3 7.5 CLK cycle time t CC n...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM IBIS SPECIFICATION 133MHz Pull-up 1.5 2.5 30.5 3.5 IOH Characteristics (Pull-up) 133MHz 133MHz Voltage Min Max Voltage IOH Min (133MHz) IOH Max (133MHz) 133MH...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1...
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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM SIMPLIFIED TRUTH TABLE (V=Valid, X=Don′t care, H=Logic high, L=Logic low) Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode register set O...
Manual Details
| Brand | Samsung |
|---|---|
| Pages | 14 |
| File Size | 161.02 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
这款SDRAM支持哪些供电标准？
它采用JEDEC标准的3.3V电源供电。
如何提高设备在不同系统中的兼容性？
该设计采用同步方式，允许通过编程突发长度和时序延迟来适应多种高性能内存系统应用。
当需要对数据进行掩码处理时应使用哪个引脚？
可以使用DQM (x4, x8) 或 L(U)DQM (x16) 引脚进行屏蔽（masking）。
如果我需要在全电量耗没后恢复电源，是否适用此设备？
它具备自动和自刷新功能，并且有64ms的刷新周期（4K cycle）。