Samsung K4S511632M CMOS SDRAM User Manual - Part 1 (1) Specifications Handbook (1)

Summary

A high-performance K4S511632M CMOS SDRAM designed for robust, high-bandwidth memory applications. This manual provides comprehensive technical specifications necessary for system designers and engineers. It covers detailed operational parameters, including timing diagrams, multi-bank access protocols, pin configurations, absolute maximum ratings, and synchronous read/write commands (MRS). Suitable for complex electronics requiring reliable and precise data handling within the JEDEC 3.3V standard.

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K4S511632M CMOS SDRAM

512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL

Revision 0.3 May. 2002

Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.3 May. 2002

Page Summary Contents For Samsung K4S511632M CMOS SDRAM User Manual - Part 1 (1) Specifications Handbook (1)

Page 1 K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0...

Page 2 K4S511632M CMOS SDRAM Revision History Revision 0.0 (Mar. 2001) Revision 0.1 (Aug. 2001) Defined target DC characteristics. Revision 0.2 (Dec. 2001) Changed "Target" to "Preliminary&quo...

Page 3 K4S511632M CMOS SDRAM 8M x 16Bit x 4 Banks Synchronous DRAM I/O ontrol utput B uffer GENERAL DESCRIPTIONFEATURES • JEDEC standard 3.3V power supply The K4S511632M is 536,870,912 bits synchronous high ...

Page 4 K4S511632M CMOS SDRAM PIN CONFIGURATION (Top view) VDD VSS DQ0 DQ15 VDDQ VSSQ DQ1 DQ14 DQ2 DQ13 VSSQ VDDQ DQ3 DQ12 DQ4 DQ11 VDDQ VSSQ DQ5 DQ10 DQ6 DQ9 VSSQ VDDQ DQ7 DQ8 VDD VSS LDQM N.C/RFU WE UDQM CA...

Page 5 K4S511632M CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 Storage te...

Page 6 K4S511632M CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit Note Burst length = 1 Operating current I...

Page 7 K4S511632M CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit AC input levels (Vih/Vil) 2.4/0.4 Input timing measurement reference level 1.4 Input rise an...

Page 8 K4S511632M CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max Min Max CAS latency=3 7.5 CLK cycle time t CC ns CAS latency=2 CLK ...

Page 9 K4S511632M CMOS SDRAM IBIS SPECIFICATION 66MHz and 100MHz Pull-up 1.5 2.5 30.5 3.5 IOH Characteristics (Pull-up) 100MHz 100MHz 66MHz Voltage Min Max Min Voltage IOH Min (100MHz) IOH Min (66MHz) IOH Ma...

Page 10 K4S511632M CMOS SDRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4...

Page 11 K4S511632M CMOS SDRAM SIMPLIFIED TRUTH TABLE Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode register set OP code 1,2 Auto refresh Entry Refresh Self refresh Bank active & ro...

Manual Details

Brand	Samsung
Pages	11
File Size	90.83 KB
Published	June 16, 2026

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Frequently Asked Questions

What are the recommended operating voltage ranges?

The device uses a JEDEC standard 3.3V power supply, and VDD/VDDQ operate in the -1.0 to 4.6V range.

How is data read or written to the RAM array?

Data inputs/outputs are multiplexed onto DQ0-DQ15 pins. Row addresses (A0~A12) select banks, and column addresses (CA0~CA9) specify locations within activated banks.

Can I program multiple functions on every clock cycle?

Yes, synchronous design allows precise cycle control with MRS cycle and address key programs for system clock I/O transactions possible on every clock cycle.

What is the required operation sequence to perform a read or write?

Read/write require active row selection (RAS) followed by column strobes (CAS) and data transfer using Write Enable (WE).