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SAMSUNG K4S643233H - F(H)E N G C L F Service Manual, User Guide (1)(1)

Summary

Elevate your system's performance with this high-density Mobile-SDRAM chip. Designed as a superior memory solution for demanding mobile and embedded computing applications, it ensures stability and maximum speed across various operating temperature ranges. This technical manual provides comprehensive details essential for engineers, covering operational specifications (voltage, clocking), advanced features like PASR and TCSR, detailed timing diagrams, power-up sequences, and functional block descriptions. Use this guide to seamlessly integrate the DRAM into your next high-bandwidth, performance-critical system design.

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K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data

• LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, • Four banks operation. fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the

• MRS cycle with address key programs.

use of system clock and I/O transactions are possible on every

-. CAS latency (1, 2 & 3).

clock cycle. Range of operating frequencies, programmable

-. Burst length (1, 2, 4, 8 & Full page).

burst lengths and programmable latencies allow the same

-. Burst type (Sequential & Interleave).

device to be useful for a variety of high bandwidth and high per-

• EMRS cycle with address key programs.

formance memory system applications.

• All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (4K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • Extended Temperature Operation (-25°C ~ 85°C). • 90Balls FBGA with 0.8mm ball pitch ( -FXXX : Leaded, -HXXX : Lead Free).

ORDERING INFORMATION

Part No. Max Freq. Interface Package

K4S643233H-F(H)E/N/G/C/L/F60 166MHz(CL=3)

K4S643233H-F(H)E/N/G/C/L/F75 133MHz(CL=3)

90 FBGA

LVCMOS

Leaded (Lead Free)

K4S643233H-F(H)E/N/G/C/L/F1H 105MHz(CL=2)

105MHz(CL=3)*1

- F(H)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C) - F(H)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

Page Summary Contents For SAMSUNG K4S643233H - F(H)E N G C L F Service Manual, User Guide (1)(1)

Page 1 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high ...
Page 2 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM FUNCTIONAL BLOCK DIAGRAM I/O ontrol utput B uffer Data Input Register Bank Select ense A Column Decoder Latency & Burst Length Programming Register ow eco...
Page 3 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM Package Dimension and Pin Configuration < Bottom View*1 > < Top View*2 > 90Ball(6x15) FBGA DQ26 DQ24 VSS VDD DQ23 DQ21 DQ28 VDDQ VSSQ VDDQ VSSQ DQ...
Page 4 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to Vss VDD, VDDQ -...
Page 5 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial) Version Parame...
Page 6 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM AC OPERATING TEST CONDITIONS(VDD = 2.7V ∼ 3.6V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial) Parameter Value Unit AC input levels (Vih/Vil) 2.4 ...
Page 7 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Version Parameter Symbol Unit Note Row active to row active delay t RRD(min) ns RAS to...
Page 8 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM AC CHARACTERISTICS(AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max Min Max Min Max CAS latency=3 t CC 6.0 7.5 9.5 9...
Page 9 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM SIMPLIFIED TRUTH TABLE COMMAND CKEn-1 CKEn CS RAS CAS WE DQM A10/AP A9 ~ A0 Note Register Mode Register Set OP CODE 1, 2 Auto Refresh Entry Refresh Self Refre...
Page 10 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM A. MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with Normal MRS Address BA0 ~ BA1 A10/AP A8 A7 A6 A5 A4 A3 A2 A1 A0 "0" Setting fo...
Page 11 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM Partial Array Self Refresh 1. In order to save power consumption, Mobile SDRAM has PASR option. 2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode ...
Page 12 K4S643233H - F(H)E/N/G/C/L/F Mobile-SDRAM C. BURST SEQUENCE 1. BURST LENGTH = 4 Initial Address Sequential Interleave 2. BURST LENGTH = 8 Initial Address Sequential Interleave February 2004

Manual Details

Brand Samsung
Pages 12
File Size 156.06 KB
Published June 16, 2026
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Frequently Asked Questions

What is the typical operating temperature range for this SDRAM module?

The recommended extended operation temperature range is -25°C to 85°C. Commercial operation ranges from -25°C to 70°C.

How do I power up and initialize the device?

Apply VDD before or with VDDQ, maintain stable power/clock for 200us, issue precharge commands (all banks), perform auto-refresh commands, and finally set the mode register.

What are the main low-power features available?

The device supports SASR, PASR (Partial Array Self Refresh), which help manage power consumption in conjunction with internal TCSR (Temperature Compensated Self Refresh).

Does manual control of certain operations require specific steps?

EMRS cycle is not mandatory. The device defaults to full driver strength and full array refreshed unless EMRS commands define PASR or DS operating modes.