Samsung K4S511633F-Y(P)C L F Mobile-SDRAM User Manual
Summary
Samsung K4S511633F is a 512Mb Mobile SDRAM organized as 4 banks of 8Mx16 bits. It supports 3.0V/3.3V LVCMOS interface, up to 133MHz with CAS latency 1-3, programmable burst length, and PASR/TCSR for mobile power management. Available in 54-ball FBGA, it targets mobile phone and portable device designers needing high-bandwidth, low-power memory.
Page 1 Text Content
K4S511633F-Y(P)C/L/F Mobile-SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM
FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S511633F is 536,870,912 bits synchronous high data
• LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, • Four banks operation. fabricated with SAMSUNG's high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the
• MRS cycle with address key programs.
use of system clock and I/O transactions are possible on every
-. CAS latency (1, 2 & 3).
clock cycle. Range of operating frequencies, programmable
-. Burst length (1, 2, 4, 8 & Full page).
burst length and programmable latencies allow the same device
-. Burst type (Sequential & Interleave).
to be useful for a variety of high bandwidth, high performance
• EMRS cycle with address key programs.
memory system applications.
• All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • 1 /CS Support. • 2Chips DDP 54Balls FBGA ( -YXXX -Pb, -PXXX -Pb Free).
ORDERING INFORMATION
Part No. Max Freq. Interface Package
K4S511633F-Y(P)C/L/F75 133MHz(CL3), 111MHz(CL2)
54 FBGA Pb
111MHz(CL2) LVCMOS
(Pb Free)K4S511633F-Y(P)C/L/F1H
K4S511633F-Y(P)C/L/F1L 111MHz(CL=3)*1, 83MHz(CL2)
- Y(P)C/L/F : Normal / Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Address configuration
Organization Bank Row Column Address
32M x16 BA0,BA1 A0 - A12 A0 - A9
September 20041
Page Summary Contents For Samsung K4S511633F-Y(P)C L F Mobile-SDRAM User Manual
Manual Details
| Brand | Samsung |
|---|---|
| Pages | 12 |
| File Size | 128.73 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What is the supply voltage for this Mobile SDRAM?
It supports 3.0V and 3.3V power supply, with VDD and VDDQ ranging 2.7V to 3.6V.
What is the operating temperature range?
Commercial temperature operation from -25°C to 70°C.
How to power up the device correctly?
Apply VDD first or same time as VDDQ, keep CKE high, stable power/clock/NOP for 200us, then precharge, auto-refresh, set mode registers.
What package does this SDRAM use?
It uses 54-ball FBGA package, available in Pb or Pb-free versions.