Samsung K4S641633H - R(B)E N G C L F Specifications (1) User Manual (1)
Summary
Elevate your embedded system performance with this Mobile-SDRAM chip, engineered for high bandwidth applications requiring stable memory operation. This module delivers robust data storage and advanced features like PASR and DQM across commercial and extended temperature grades. The accompanying technical manual provides comprehensive details on integration, covering functional block diagrams, precise voltage specifications (e.g., 3.0V/3.3V), detailed power-up sequences, and optimal burst operational parameters. It is essential reading for hardware designers and engineers building mission-critical or high-performance mobile computing devices.
Page 1 Text Content
K4S641633H - R(B)E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data
• LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, • Four banks operation. fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the
• MRS cycle with address key programs.
use of system clock and I/O transactions are possible on every
-. CAS latency (1, 2 & 3).
clock cycle. Range of operating frequencies, programmable
-. Burst length (1, 2, 4, 8 & Full page).
burst lengths and programmable latencies allow the same
-. Burst type (Sequential & Interleave).
device to be useful for a variety of high bandwidth and high per-
• EMRS cycle with address key programs.
formance memory system applications.
• All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (4K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • Extended Temperature Operation (-25°C ~ 85°C). • 54Balls FBGA with 0.8mm ball pitch ( -RXXX : Leaded, -BXXX : Lead Free).
ORDERING INFORMATION
Part No. Max Freq. Interface Package
K4S641633H-R(B)E/N/G/C/L/F75 133MHz(CL=3)
54 FBGA
105MHz(CL=2) LVCMOS
Leaded (Lead Free)K4S641633H-R(B)E/N/G/C/L/F1H
105MHz(CL=3)*1
- R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
February 2004
Page Summary Contents For Samsung K4S641633H - R(B)E N G C L F Specifications (1) User Manual (1)
Manual Details
| Brand | Samsung |
|---|---|
| Pages | 12 |
| File Size | 127.38 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
What is the recommended operating temperature range for standard use?
The Commercial Temperature Operation range is -25°C to 70°C. For Extended Temperature, it is -25°C to 85°C.
How do I properly power up the device?
Apply VDD first (or at the same time as VDDQ), maintain stable power and clocks for 200us, issue precharge commands, perform auto-refresh, and finally run a mode register set command.
What voltages are required for operation?
The device operates using VDD and VDDQ supply voltages, which have an absolute maximum range of -1.0 to 4.6V, but recommended typical values are 3.0V.
Is the device compatible with high-end systems?
It is designed for a variety of high bandwidth and high performance memory system applications and supports partial array self refresh (PASR).