SAMSUNG K4S641633H - R(B)E N G C L F February 2004 Mobile-SDRAM User Guide
Summary
Samsung K4S641633H series Mobile-SDRAM datasheet featuring 1M x 16Bit x 4 Banks configuration in 54FBGA package. Supports 3.0V and 3.3V power supply with mobile-optimized features for low power consumption. This technical specification includes pin assignments, electrical characteristics, timing parameters, and application guidelines. Essential reference for memory designers and engineers developing mobile devices and embedded systems requiring high-speed, low-power memory solutions.
Page 1 Text Content
K4S641633H - R(B)E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data
• LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, • Four banks operation. fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the
• MRS cycle with address key programs.
use of system clock and I/O transactions are possible on every
-. CAS latency (1, 2 & 3).
clock cycle. Range of operating frequencies, programmable
-. Burst length (1, 2, 4, 8 & Full page).
burst lengths and programmable latencies allow the same
-. Burst type (Sequential & Interleave).
device to be useful for a variety of high bandwidth and high per-
• EMRS cycle with address key programs.
formance memory system applications.
• All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (4K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • Extended Temperature Operation (-25°C ~ 85°C). • 54Balls FBGA with 0.8mm ball pitch ( -RXXX : Leaded, -BXXX : Lead Free).
ORDERING INFORMATION
Part No. Max Freq. Interface Package
K4S641633H-R(B)E/N/G/C/L/F75 133MHz(CL=3)
54 FBGA
105MHz(CL=2) LVCMOS
Leaded (Lead Free)K4S641633H-R(B)E/N/G/C/L/F1H
105MHz(CL=3)*1
- R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
February 2004
Page Summary Contents For SAMSUNG K4S641633H - R(B)E N G C L F February 2004 Mobile-SDRAM User Guide
Manual Details
| Brand | Samsung |
|---|---|
| Pages | 12 |
| File Size | 110.77 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What specialized refresh and self-monitoring functions are supported by this SDRAM?
It supports Partial Array Self Refresh (PASR), internal Temperature Compensated Self Refresh (TCSR), DQM for masking, and Auto refresh.
How is the recommended power-up sequence performed?
Apply power, maintain stable clocks for a minimum of 200us, issue precharge commands, follow with auto-refresh, and set the mode register.
Are there different options for operating temperature ranges?
Yes, products are available for Commercial Temperature (-25°C ~ 70°C) or Extended Temperature (-25°C ~ 85°C).
What is the recommended voltage range for the supply (VDD/VDDQ)?
The recommended operating condition is 3.0V, which falls within a general range of 2.7V to 3.6V.