SAMSUNG Electronics K4S64323LH - F(H)E N G C L F User Manual
Summary
This highly detailed manual provides comprehensive specifications for K4S64323LH Mobile SDRAM—a high-speed synchronous dynamic RAM optimized for demanding mobile and embedded systems. The guide covers essential engineering topics, including functional block diagrams, power-up sequencing, burst transfer modes, operating timing parameters, and environmental temperature ranges (Commercial to Extended). System designers and hardware engineers can use this resource to ensure proper integration of the component into high-bandwidth memory applications, detailing voltage requirements and ensuring maximal system reliability.
Page 1 Text Content
查询K4S64323LH-FC1H供应商
K4S64323LH - F(H)E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S64323LH is 67,108,864 bits synchronous high data
• LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, • Four banks operation. fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the
• MRS cycle with address key programs.
use of system clock and I/O transactions are possible on every
-. CAS latency (1, 2 & 3).
clock cycle. Range of operating frequencies, programmable
-. Burst length (1, 2, 4, 8 & Full page).
burst lengths and programmable latencies allow the same
-. Burst type (Sequential & Interleave).
device to be useful for a variety of high bandwidth and high per-
• EMRS cycle with address key programs.
formance memory system applications.
• All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (4K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • Extended Temperature Operation (-25°C ~ 85°C). • 90Balls FBGA with 0.8mm ball pitch ( -FXXX : Leaded, -HXXX : Lead Free).
ORDERING INFORMATION
Part No. Max Freq. Interface Package
K4S64323LH-F(H)E/N/G/C/L/F60 166MHz(CL=3)
K4S64323LH-F(H)E/N/G/C/L/F75 133MHz(CL=3)
90 FBGA
LVCMOS
Leaded (Lead Free)
K4S64323LH-F(H)E/N/G/C/L/F1H 105MHz(CL=2)
K4S64323LH-F(H)E/N/G/C/L/F1L
105MHz(CL=3)*1
- F(H)E/N/G : Normal/Low/Low Power, Extended Temperature(-25°C ~ 85°C) - F(H)C/L/F : Normal/Low/Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
February 2004
Page Summary Contents For SAMSUNG Electronics K4S64323LH - F(H)E N G C L F User Manual
Manual Details
| Brand | Electronics |
|---|---|
| Pages | 12 |
| File Size | 139.90 KB |
| Published | May 20, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What are the operating temperature ranges?
The device supports Commercial Temperature Operation (-25°C ~ 70°C) and Extended Temperature Operation (-25°C ~ 85°C).
How is power applied to the device?
Apply VDD before or at the same time as VDDQ, maintaining stable clock and NOP for a minimum of 200us.
Which features are supported by this SDRAM?
It supports special functions like PASR (Partial Array Self Refresh), Internal TCSR, Auto refresh, and DQM for masking.