Samsung Electronics SDRAM 256Mb E-Die (x4, x8, x16) Data Sheet

Summary

Enhance your system performance with this high-density, synchronous SDRAM module. This robust memory component supports 3.3V operation and features four independent banks, making it ideal for demanding, high-bandwidth applications. The accompanying manual is an essential engineer's guide, providing detailed specifications, functional block diagrams, comprehensive pin configurations, and precise operational timing parameters (including burst lengths and refresh cycles). It is specifically designed for hardware designers and embedded systems developers who require reliable integration of RoHS compliant, high-speed memory into their electronic designs.

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Samsung Electronics SDRAM 256Mb E-Die (x4, x8, x16) Data Sheet - Page 1

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查询K4S560432E-UC75供应商

SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free

(Ro HS compliant)

Revision 1.3 August 2004

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.3 August 2004

Page Summary Contents For Samsung Electronics SDRAM 256Mb E-Die (x4, x8, x16) Data Sheet

Page 1 查询K4S560432E-UC75供应商 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (Ro HS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the ri...

Page 2 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History Revision 1.0 (May. 2003) - First generation for Pb_free products Revision 1.1 (August. 2003) - Corrected typo in Page #8, 9 Revision 1.2 (Ma...

Page 3 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed addre...

Page 4 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Package Physical Dimension 0.25 TYP 0.010 22.62 MAX 0.891 22.22 ± 0.10 0.21 ± 0.05 1.00 ± 0.10 1.20 MAX0.039 MAX 0.004 0. 3± 0. +0.10 0.05 0.71 0.30 -0.05 0....

Page 5 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM FUNCTIONAL BLOCK DIAGRAM I/O ontrol utput B uffer ense A LWE Data Input Register Bank Select Column Decoder ow ecoder ol. B uffer Latency & Burst Length ...

Page 6 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM PIN CONFIGURATION (Top view) x16 x8 x4 x16x8x4 VDD VDD VDD VSS VSS VSS DQ0 DQ0 N.C N.C DQ7 DQ15 VDDQ VDDQ VDDQ VSSQ VSSQ VSSQ DQ1 N.C N.C N.C N.C DQ14 DQ2 DQ...

Page 7 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to Vss VDD, VDDQ ...

Page 8 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM DC CHARACTERISTICS (x4, x8) (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit Note Burst ...

Page 9 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM DC CHARACTERISTICS (x16) (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit Note Burst len...

Page 10 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit AC input levels (Vih/Vil) 2.4/0.4 Input timing measurement reference le...

Page 11 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max CAS latency=3 7.5 CLK cycle time t CC ns CAS l...

Page 12 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM IBIS SPECIFICATION 66MHz and 100MHz/133MHz Pull-up IOH Characteristics (Pull-up) 100MHz 100MHz 66MHz Voltage 133MHz 133MHz Min Max -100 Voltage IOH Min (100M...

Page 13 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 Voltage Minimum VSS clamp curren...

Page 14 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM SIMPLIFIED TRUTH TABLE (V=Valid, X=Don't care, H=Logic high, L=Logic low) Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode register set ...

Manual Details

Brand	Electronics
Pages	14
File Size	200.17 KB
Published	May 20, 2026

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Frequently Asked Questions

What voltage supply does the SDRAM require?

The device requires a JEDEC standard 3.3V power supply.

Is the component compliant with environmental standards?

Yes, it is Pb-free (RoHS compliant).

What are the available organization options?

It comes in architectures like 64M x 4, 32M x 8, and 16M x 16.

How does the device handle data input control?

DQM (x4,x8) and L(U)DQM (x16) are provided for masking functions.