Samsung SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Data Handbook (1)(1)

Summary

This comprehensive manual details high-performance, synchronous CMOS SDRAM chips available in multiple configurations. The product features four-bank operation and advanced memory functions like auto/self refresh, making it ideal for demanding modern applications. The documentation provides essential technical guides, including detailed functional diagrams, pinout maps, clocking protocols, and operational parameters (timing, organization). It is designed for hardware engineers requiring reliable, high-bandwidth solutions for complex digital memory systems.

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SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM

256Mb E-die SDRAM Specification

Revision 1.5 May 2004

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.5 May 2004

Page Summary Contents For Samsung SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Data Handbook (1)(1)

Page 1 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 M...

Page 2 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History Revision 1.0 (May. 2003) - First release. Revision 1.1 (June. 2003) - Correct Typo Revision 1.2 (June. 2003) - Added 166MHz speed bin in x16...

Page 3 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed addre...

Page 4 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Package Physical Dimension 0.25 TYP 0.010 22.62 MAX 0.891 22.22 ± 0.10 0.21 ± 0.05 1.00 ± 0.10 1.20 MAX0.039 MAX 0.004 0. 3± 0. +0.10 0.05 0.71 0.30 -0.05 0....

Page 5 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM FUNCTIONAL BLOCK DIAGRAM I/O ontrol utput B uffer ense A LWE Data Input Register Bank Select Column Decoder ow ecoder ol. B uffer Latency & Burst Length ...

Page 6 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM PIN CONFIGURATION (Top view) x16 x8 x4 x16x8x4 VDD VDD VDD VSS VSS VSS DQ0 DQ0 N.C N.C DQ7 DQ15 VDDQ VDDQ VDDQ VSSQ VSSQ VSSQ DQ1 N.C N.C N.C N.C DQ14 DQ2 DQ...

Page 7 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to Vss VDD, VDDQ ...

Page 8 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM DC CHARACTERISTICS (x4, x8) (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit Note Burst ...

Page 9 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM DC CHARACTERISTICS (x16) (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit Note Burst len...

Page 10 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit AC input levels (Vih/Vil) 2.4/0.4 Input timing measurement reference le...

Page 11 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max CAS latency=3 7.5 CLK cycle time t CC ns CAS l...

Page 12 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM IBIS SPECIFICATION 100MHz/133MHz Pull-up 1.5 2.5 30.5 3.5 IOH Characteristics (Pull-up) 100MHz 100MHz Voltage 133MHz 133MHz Min Max -100 Voltage IOH Min (100...

Page 13 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 Voltage Minimum VSS clamp curren...

Page 14 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM SIMPLIFIED TRUTH TABLE (V=Valid, X=Don't care, H=Logic high, L=Logic low) Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode register set ...

Manual Details

Brand	Samsung
Pages	14
File Size	209.96 KB
Published	June 17, 2026

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Frequently Asked Questions

What power supply voltage does this SDRAM use?

It uses a JEDEC standard 3.3V power supply.

How are the row and column addresses configured?

Row and Column address configuration is detailed for various organizations (e.g., 64M x 4, 32M x 8).

What kind of refresh function does it support?

It supports Auto & self refresh with a general refresh period of 64ms (8K Cycle).

When must CKE be enabled?

CKE should be enabled at least one cycle prior to the new command.