Samsung K4S283233F - F(HE)NGCLF February 2004 Mobile-SDRAM Manual and User Guide
Summary
High-performance Mobile SDRAM semiconductor (K4S283233F) designed for demanding embedded systems requiring high bandwidth. This technical manual provides comprehensive operational details, including functional block diagrams, electrical specifications, recommended power-up sequences, and advanced refresh modes like PASR and TCSR. It is essential reading for hardware engineers and system architects integrating reliable, low-power memory solutions into mobile or industrial applications.
Page 1 Text Content
K4S283233F - F(H)E/N/G/C/L/F Mobile-SDRAM
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S283233F is 134,217,728 bits synchronous high data
• LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, • Four banks operation. fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the
• MRS cycle with address key programs.
use of system clock and I/O transactions are possible on every
-. CAS latency (1, 2 & 3).
clock cycle. Range of operating frequencies, programmable
-. Burst length (1, 2, 4, 8 & Full page).
burst lengths and programmable latencies allow the same
-. Burst type (Sequential & Interleave).
device to be useful for a variety of high bandwidth and high per-
• EMRS cycle with address key programs.
formance memory system applications.
• All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (4K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • Extended Temperature Operation (-25°C ~ 85°C). • 90Balls FBGA with 0.8mm ball pitch ( -FXXX : Leaded, -HXXX : Lead Free).
ORDERING INFORMATION
Part No. Max Freq. Interface Package
K4S283233F-F(H)E/N/G/C/L/F60 166MHz(CL=3)
K4S283233F-F(H)E/N/G/C/L/F75 133MHz(CL=3)
90 FBGA
LVCMOS
Leaded (Lead Free)
K4S283233F-F(H)E/N/G/C/L/F1H 105MHz(CL=2)
105MHz(CL=3)*1
- F(H)E/N/G : Normal / Low/ Low Power, Extended Temperature(-25°C ~ 85°C) - F(H)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
February 2004
Page Summary Contents For Samsung K4S283233F - F(HE)NGCLF February 2004 Mobile-SDRAM Manual and User Guide
Manual Details
| Brand | Samsung |
|---|---|
| Pages | 12 |
| File Size | 155.96 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What power supply voltages does the K4S283233F support?
It supports 3.0V and 3.3V power supply, with VDD and VDDQ ranging from 2.7V to 3.6V.
What is the package type of this Mobile SDRAM?
It uses a 90-ball FBGA package with 0.8mm ball pitch, available in leaded or lead-free options.
What is the minimum stable power and clock time before initialization?
Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
Can this SDRAM be used in medical devices?
No, it is not designed for life-critical uses like medical, aerospace, or military systems.