SAMSUNG SDRAM 128Mb F- Die (x4, x8, x16) Product Data Sheet Manual
Summary
This preliminary datasheet provides specifications for the Samsung K4S280432F, K4S280832F, and K4S281632F 128Mb F-die CMOS SDRAM components organized as 8M x 4, 4M x 8, and 2M x 16 configurations. It details the JEDEC standard 3.3V operation, programmable CAS latency and burst length, auto and self-refresh modes, and 54-pin TSOP packaging for memory system designs.
Page 1 Text Content
Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM
128Mb F-die SDRAM Specification
Revision 0.2 November. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.2 November. 2003
Page Summary Contents For SAMSUNG SDRAM 128Mb F- Die (x4, x8, x16) Product Data Sheet Manual
Page 1
Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 * Samsung Electronics reserves the right to change products or specification without ...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Revision History Revision 0.0 (Agust, 2003) - First release. Revision 0.1 (November, 2003) - completed DC characteristics. Revision 0.2 (November...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multip...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Package Physical Dimension 0.25 TYP 0.010 22.62 MAX 0.891 22.22 ± 0.10 0.21 ± 0.05 1.00 ± 0.10 1.20 MAX0.039 MAX 0.004 0. 3± 0. +0.10 0.05 0.71 0...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM FUNCTIONAL BLOCK DIAGRAM I/O ontrol utput B uffer ense A LWE Data Input Register Bank Select Column Decoder ow ecoder ol. B uffer Latency & B...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM PIN CONFIGURATION (Top view) x16 x8 x4 x16x8x4 VDD VDD VDD VSS VSS VSS DQ0 DQ0 N.C N.C DQ7 DQ15 VDDQ VDDQ VDDQ VSSQ VSSQ VSSQ DQ1 N.C N.C N.C N.C...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to Vs...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM DC CHARACTERISTICS (x4, x8) (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM DC CHARACTERISTICS (x16) (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit No...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit Input levels (Vih/Vil) 2.4/0.4 Input timing measurement ref...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) - 60 (x16 only) - 75 Parameter Symbol Unit Note Min Max Min Max CLK cycle CAS...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM IBIS SPECIFICATION 66MHz and 100MHz/133MHz Pull-up IOH Characteristics (Pull-up) 100MHz 100MHz 66MHz Voltage 133MHz 133MHz Min Min Max -100 Volta...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 ...
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Preliminary SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM SIMPLIFIED TRUTH TABLE (V=Valid, X=Don′t care, H=Logic high, L=Logic low) Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode r...
Manual Details
| Brand | Samsung |
|---|---|
| Pages | 14 |
| File Size | 162.11 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What programming voltage does this SDRAM require?
The device requires a JEDEC standard 3.3V power supply.
Can this SDRAM be used in various high-bandwidth applications?
Yes, its synchronous design and programmable latencies allow it to be useful for a variety of high bandwidth, high performance memory system applications.
How is data sampled by the device?
All inputs are sampled at the positive going edge of the system clock (CLK).
What kind of read operation can be performed with DQM?
The Read DQM latency is 2 CLK cycles.