Samsung K4S640832K Product Data Sheet

Summary

Introducing robust synchronous Dynamic RAM (SDRAM) modules designed for high-performance memory system applications. This comprehensive technical manual provides detailed specifications, functional block diagrams, timing parameters, and pin configuration guides for K4S640832K/K4S641632K series. It is essential reading for engineers and system architects who need precise electrical and operational details to reliably integrate fast, reliable memory into high-bandwidth computing or specialized equipment.

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现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!K4S640832K K4S641632K Synchronous DRAM

64Mb K-die SDRAM Specification

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.1 February 2006 1 of 14

Page Summary Contents For Samsung K4S640832K Product Data Sheet

Page 1 现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITH...

Page 2 K4S640832K K4S641632K Synchronous DRAM Revision History Revision Month Year History 0.0 January - Target spec release 0.1 March - Change DC current 0.2 April - Delete bit organization for x4 0.3 July ...

Page 3 K4S640832K K4S641632K Synchronous DRAM 2M x 8Bit x 4Banks / 1M x 16Bit x 4Banks SDRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • M...

Page 4 K4S640832K K4S641632K Synchronous DRAM Package Physical Dimension 0.25 TYP 0.010 22.62 MAX 0.891 MAX0.039 0.10 MAX 0.004 +0.10 0.05 0.71 0.30 -0.05 0.80 MIN ( ) 0.002 54Pin TSOP(II) Package Dimension ...

Page 5 K4S640832K K4S641632K Synchronous DRAM FUNCTIONAL BLOCK DIAGRAM I/O ontrol utput Buffer Data Input Register Bank Select ense A Column Decoder Latency & Burst Length Programming Register ow ecoder ...

Page 6 K4S640832K K4S641632K Synchronous DRAM PIN CONFIGURATION (Top view) x16 x8 x16x8 VDD VDD VSS VSS DQ0 DQ0 DQ7 DQ15 VDDQ VDDQ VSSQ VSSQ DQ1 N.C N.C DQ14 DQ2 DQ1 DQ6 DQ13 VSSQ VSSQ VDDQ VDDQ DQ3 N.C N.C ...

Page 7 K4S640832K K4S641632K Synchronous DRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to VSS VDD, VDDQ -1.0...

Page 8 K4S640832K K4S641632K Synchronous DRAM DC CHARACTERISTICS (x8) (Recommended operating condition unless otherwise noted, TA = 0 to 70°C for x8) Version Parameter Symbol Test Condition Unit Note Burst l...

Page 9 K4S640832K K4S641632K Synchronous DRAM DC CHARACTERISTICS (x16) (Recommended operating condition unless otherwise noted, TA = 0 to 70°C for x16 only) Version Parameter Symbol Test Condition Unit Note ...

Page 10 K4S640832K K4S641632K Synchronous DRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit AC input levels (Vih/Vil) 2.4/0.4 Input timing measurement reference level ...

Page 11 K4S640832K K4S641632K Synchronous DRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max Min Max CAS latency=3 7.5 CLK cycle time t CC ns C...

Page 12 K4S640832K K4S641632K Synchronous DRAM IBIS SPECIFICATION 200MHz/133MHz Pull-up 1.5 2.5 30.5 3.5 IOH Characteristics (Pull-up) 200MHz/133MHz 200MHz/133MHz Voltage Min Max Voltage IOH Min (200MHz / 133...

Page 13 K4S640832K K4S641632K Synchronous DRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 ...

Page 14 K4S640832K K4S641632K Synchronous DRAM SIMPLIFIED TRUTH TABLE (V=Valid, X=Don′t care, H=Logic high, L=Logic low) Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode register set OP c...

Manual Details

Brand	Samsung
Pages	14
File Size	230.42 KB
Published	June 17, 2026

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Frequently Asked Questions

What kind of power supply does this memory module use?

It uses a JEDEC standard 3.3V power supply.

Are these modules compliant with environmental standards?

The package is Pb/Pb-free and RoHS compliant for Pb-free Package.

What determines when data inputs are sampled?

All inputs are sampled at the positive going edge of the system clock (CLK).

Can this memory be used in critical applications like medical equipment?

No, Samsung explicitly states products are not intended for use in life support or medical applications.

How can I increase device speed and flexibility?

The synchronous design allows precise cycle control, and programmable burst length and latencies make it useful for varied high-bandwidth systems.