Samsung K4S280432C Data Sheet

Summary

Explore this comprehensive manual for high-performance CMOS SDRAM (K4S280432C). This synchronous memory chip offers reliable operation across multiple banks, featuring automated refresh cycles and LVTTL compatibility. The technical guide details every functional block, pin assignment, operational timing parameters, and complex command set required for system integration. It is essential reading for engineers and system designers building high-bandwidth computing platforms requiring precise cycle control.

📄 Preview ‹ PAGE OF 11 ›

‹

›

Page 1 Text Content

K4S280432C CMOS SDRAM

128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Revision 0.0 Mar. 2000

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.0 Mar. 2000

Page Summary Contents For Samsung K4S280432C Data Sheet

Page 1 K4S280432C CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. ...

Page 2 K4S280432C CMOS SDRAM Revision History Revision 0.0 (March 21, 2000) • Changed t OH of K4S280432C-TC75/TL75 from 2.7ns to 3.0ns. • Deleted -10 and -80 speed specification. Rev. 0.0 Mar. 2000

Page 3 K4S280432C CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM I/O ontrol utput B uffer GENERAL DESCRIPTIONFEATURES • JEDEC standard 3.3V power supply The K4S280432C is 134,217,728 bits synchronous high d...

Page 4 K4S280432C CMOS SDRAM PIN CONFIGURATION (Top view) VDD VSS N.C N.C VDDQ VSSQ N.C N.C DQ0 DQ3 VSSQ VDDQ N.C N.C N.C N.C VDDQ VSSQ N.C N.C DQ1 DQ2 VSSQ VDDQ N.C N.C VDD VSS N.C N.C/RFU WE DQM CAS CLK RA...

Page 5 K4S280432C CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 Storage te...

Page 6 K4S280432C CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit Note Burst length = 1 Operating current I...

Page 7 K4S280432C CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit Input levels (Vih/Vil) 2.4/0.4 Input timing measurement reference level 1.4 Input rise and f...

Page 8 K4S280432C CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max Min Max CAS latency=3 7.5 CLK cycle time t CC ns CAS latency=2 CLK ...

Page 9 K4S280432C CMOS SDRAM IBIS SPECIFICATION 66MHz and 100MHz/133MHz Pull-up IOH Characteristics (Pull-up) 100MHz 100MHz 66MHz Voltage 133MHz 133MHz Min Min Max -100 Voltage IOH Min (100MHz/133MHz) IOH Mi...

Page 10 K4S280432C CMOS SDRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4...

Page 11 K4S280432C CMOS SDRAM SIMPLIFIED TRUTH TABLE Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode register set OP code 1,2 Auto refresh Entry Refresh Self refresh Bank active & ro...

Manual Details

Brand	Samsung
Pages	11
File Size	310.63 KB
Published	June 17, 2026

4 views

Enter the captcha to get the download link:

Frequently Asked Questions

What is the recommended operating voltage for VDD and VDDQ?

The recommended supply voltage (VDD, VDDQ) relative to VSS is 3.3V, with a typical range of 3.0V to 3.6V.

How can I control bank selection during read/write operations?

Bank selection uses the BA0 and BA1 pins: Low-Low selects Bank A, Low-High selects Bank B, High-Low selects Bank C, and High-High selects Bank D.

What is the role of the CAS pin?

The CAS (Column address strobe) enables column access and signals when data can be read or written to the device.

Does this SDRAM support various transfer modes?

Yes, it supports adjustable parameters such as CAS latency (2 & 3), programmable burst length (1, 2, 4 & 8), and configurable burst types (Sequential & Interleave).