Samsung K9F5608X0D Data Sheet
Summary
This comprehensive datasheet details the K9F5608X0D series NAND Flash Memory, providing critical specifications for robust nonvolatile solid-state storage solutions. The manual covers product variations (1.8V, 2.65V, and 3.3V), diverse package types (FBGA, TSOP I, WSOP I), and advanced features like Error Correcting Code (ECC) and built-in power protection. Essential for engineers developing embedded systems and high-reliability storage applications needing reliable reading and writing capabilities.
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查询K9F5608X0D-FCB0供应商 K9F5608R0D
K9F5608U0D K9F5608D0D FLASH MEMORY
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
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* Samsung Electronics reserves the right to change products or specification without notice.
Page Summary Contents For Samsung K9F5608X0D Data Sheet
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查询K9F5608X0D-FCB0供应商 K9F5608R0D K9F5608U0D K9F5608D0D FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DO...
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K9F5608U0D K9F5608D0D FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue May 16th. 2005 Advance 0.1 1. Leaded package d...
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K9F5608U0D K9F5608D0D FLASH MEMORY 32M x 8 Bit NAND Flash Memory PRODUCT LIST Part Number Vcc Range Organization PKG Type K9F5608R0D-J 1.65 ~ 1.95V FBGA K9F5608D0D-P TSOP1 K9F5608D0D-J FBGA K9F5608U0D...
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K9F5608U0D K9F5608D0D FLASH MEMORY PIN CONFIGURATION (TSOP1) 0. 0. 8+0 -0 .0 0. -0 .0 TY K9F5608D(U)0D-PCB0/PIB0 N.C N.C N.C N.C N.C N.C N.C N.C N.C I/O7 N.C I/O6 R/B I/O5 RE I/O4 CE N.C N.C N.C N.C N...
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K9F5608U0D K9F5608D0D FLASH MEMORY PIN CONFIGURATION (FBGA) K9F5608X0D-JCB0/JIB0 Top View R/B/WE/CEVss ALE/WP NC /RE CLE NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NCNC NC I/O0 NC NC Vcc NC...
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K9F5608U0D K9F5608D0D FLASH MEMORY 0. TY +0 .0 +0 .0 PIN CONFIGURATION (WSOP1) 0. -0 .0 0. -0 .0 12.40M AX K9F5608U0D-FCB0/FIB0 N.C N.C N.C N.C DNU DNU N.C N.C N.C I/O7 N.C I/O6 R/B I/O5 RE I/O4 CE N....
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K9F5608U0D K9F5608D0D FLASH MEMORY PIN DESCRIPTION Pin NAME Pin Function DATA INPUTS/OUTPUTS I/O0 ~ I/O7 The I/O pins are used to input command, address and data, and to output data during read operat...
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K9F5608U0D K9F5608D0D FLASH MEMORY Figure 1-1. K9F5608X0D FUNCTIONAL BLOCK DIAGRAM VCC VSS X-Buffers Latches 256M + 8M Bit & Decoders NAND Flash ARRAY Y-Buffers Latches & Decoders (512 + 16)By...
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K9F5608U0D K9F5608D0D FLASH MEMORY PRODUCT INTRODUCTION The K9F5608X0D is a 264Mbit(276,824,064 bit) memory organized as 65,536 rows(pages) by 528 columns. Spare eight columns are located from column ...
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K9F5608U0D K9F5608D0D FLASH MEMORY ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit VIN/OUT -0.6 to + 4.6 Voltage on any pin relative to VSS -0.6 to + 4.6 VVCC VCCQ -0.6 to + 4.6 K9F5608X0D-XCB0 ...
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K9F5608U0D K9F5608D0D FLASH MEMORY DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.) Parameter Symbol Test Conditions 2.65V 3.3V Unit1.8V Min Typ Max Min Typ Max Min ...
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K9F5608U0D K9F5608D0D FLASH MEMORY VALID BLOCK Parameter Symbol Min Typ. Max Unit Valid Block Number NVB Blocks NOTE : 1. The device may include invalid blocks when first shipped. Additional invalid b...
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K9F5608U0D K9F5608D0D FLASH MEMORY PROGRAM/ERASE CHARACTERISTICS Parameter Symbol Min Typ Max Unit Program Time t PROG µs Number of Partial Program Cycles Main Array cycles in the Same Page Spare Arra...
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K9F5608U0D K9F5608D0D FLASH MEMORY AC CHARACTERISTICS FOR OPERATION Parameter Symbol Min Max Unit Data Transfer from Cell to Register t R µs ALE to RE Delay t AR ns CLE to RE Delay t CLR ns Ready to R...
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K9F5608U0D K9F5608D0D FLASH MEMORY NAND Flash Technical Notes Initial Invalid Block(s) Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is n...
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K9F5608U0D K9F5608D0D FLASH MEMORY NAND Flash Technical Notes (Continued) Error in write or read operation Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer...
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K9F5608U0D K9F5608D0D FLASH MEMORY NAND Flash Technical Notes (Continued) Erase Flow Chart Read Flow Chart Start Start Write 60h Write 00h Write Block Address Write Address Write D0h Read Data Read St...
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K9F5608U0D K9F5608D0D FLASH MEMORY Pointer Operation of K9F5608X0D(X8) Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’00h’ comman...
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K9F5608U0D K9F5608D0D FLASH MEMORY System Interface Using CE don’t-care. For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The inter...
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K9F5608U0D K9F5608D0D FLASH MEMORY I/O DATA Device I/Ox Data In/Out K9F5608X0D(X8 device) I/O 0 ~ I/O 7 ~528byte NOTE: 1. I/O8~15 must be set to "0" during command or address input. I/O8~15 ...
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K9F5608U0D K9F5608D0D FLASH MEMORY Input Data Latch Cycle t CLH t ALS t WC t WP t WP t WP t DH t DH t DH t DS t DS t DS DIN 0 DIN 1 DIN n Sequential Out Cycle after Read(CLE=L, WE=H, ALE=L) t CHZ* t R...
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K9F5608U0D K9F5608D0D FLASH MEMORY Status Read Cycle t CLR t CLS t CLH t CH t WP t CEA t CHZ t OHt WHR1 t DH t RHZ t REAt IR I/Ox 70h Status Output Read1 Operation (Read One Page) 1) On K9F5608U0D_Y,P...
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K9F5608U0D K9F5608D0D FLASH MEMORY Read1 Operation (Intercepted by CE) On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P CE must be held CE low during t R t CHZ t R t RC N Address Read I/Ox Col. Add Row Add1 Ro...
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K9F5608U0D K9F5608D0D FLASH MEMORY Sequential Row Read Operation (only for On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P) Col. Add Row Add1 Row Add2 Dout Dout Dout Dout Dout Dout Dout Dout I/Ox N+1 N+2 Read...
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K9F5608U0D K9F5608D0D FLASH MEMORY Copy-Back Program Operation t WB t PROG I/Ox 00h Col. Add Row Add1 Row Add2 A0~A7 A17~A24A9~A16 70h I/O08Ah Column Program Column Read Status Page(Row) Page(Row) Add...
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K9F5608U0D K9F5608D0D FLASH MEMORY Manufacture & Device ID Read Operation t REA Device I/Ox 90h 00h ECh Code* Read ID Command Address. 1cycle Maker Code Device Code Device Device Code*
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K9F5608U0D K9F5608D0D FLASH MEMORY DEVICE OPERATION PAGE READ Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command regis- ter...
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K9F5608U0D K9F5608D0D FLASH MEMORY Figure 9. Read2 Operation On K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P CE must be held CE low during t R I/Ox 50h Start Add.(3Cycle) Data Output(Sequential) Spare Field A...
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K9F5608U0D K9F5608D0D FLASH MEMORY Figure 9-1. Sequential Row Read2 Operation (only for K9F5608U0D_Y,P,V,F or K9F5608D0D_Y,P) I/Ox 50h Start Add.(3Cycle) Data Output Data Output Data Output 1st 2nd Nt...
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K9F5608U0D K9F5608D0D FLASH MEMORY PAGE PROGRAM The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte/word or consecutive bytes/words up to 5...
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K9F5608U0D K9F5608D0D FLASH MEMORY BLOCK ERASE The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup com- mand(60h). Only addres...
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K9F5608U0D K9F5608D0D FLASH MEMORY READ ID The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Two read cycles seq...
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K9F5608U0D K9F5608D0D FLASH MEMORY READY/BUSY The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random read completion. The R/B pin ...
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K9F5608U0D K9F5608D0D FLASH MEMORY @ Vcc = 1.8V, Ta = 25°C , CL = 30p F Ibusy 0.85 tr tr, tf [s 0.43 tr, tf [s tr, tf [s 1.7 1.7 1.7 tf Rp(ohm) @ Vcc = 2.65V, Ta = 25°C , CL = 30p F 2.3 Ibusy 2.3 2.3 ...
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K9F5608U0D K9F5608D0D FLASH MEMORY Data Protection & Power up sequence The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage d...
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Manual Details
| Brand | Samsung |
|---|---|
| Pages | 36 |
| File Size | 760.00 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What is the reliability rating concerning program/erase cycles?
The memory offers an endurance of 100K Program/Erase Cycles.
What defines the required voltage supply for different models?
The K9F5608R0D requires 1.65~1.95V, the K9F5608D0D requires 2.4~2.9V, and the K9F5608U0D requires 2.7 ~ 3.6 V.
What protections are included during power transitions?
An internal voltage detector disables functions if Vcc drops below specific thresholds (e.g., ~1.5V for 1.8V devices).
Where can I access the most detailed product specifications and FAQs?
For more detailed features, refer to Samsung’s Flash web site or contact your nearest Samsung office.