Samsung K9F2808Q0B-DCB0, DIB0 Data Sheet
Summary
Explore high-performance NAND Flash Memory solutions designed for demanding embedded systems. This comprehensive manual serves as a detailed technical revision history, providing engineers with critical data on device variations, voltage updates (1.7V to 3.6V), and key electrical timing parameters over time. It ensures product developers have the necessary documentation for successful design integration, covering multiple packaging types (TBGA, TSOP I) and advanced hardware protections for reliable system performance.
Page 1 Text Content
K9F2808Q0B-DCB0,DIB0 K9F2808U0B-YCB0,YIB0
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY
Document Title 16M x 8 Bit NAND Flash Memory
Revision History Revision No. History Draft Date Remark 0.0 Initial issue. May 28’th 2001 Advance
0.1 K9F2808U0B(3.3V device)’s qualification is finished Jun. 30th 2001
0.2 K9F2808Q0B (1.8V device)
- Changed typical read operation current (Icc1) from 8m A to 5m A Jul. 30th 2001 K9F2808Q0B - Changed typical program operation current (Icc2) from 8m A to 5m A : Preliminary - Changed typical erase operation current (Icc3) from 8m A to 5m A - Changed typical program time(t PROG) from 200us to 300us - Changed ALE to RE Delay (ID read, t AR1) from 100ns to 20ns - Changed CLE hold time(t CLH) from 10ns to 15ns - Changed CE hold time(t CH) from 10ns to 15ns - Changed ALE hold time(t ALH) from 10ns to 15ns - Changed Data hold time(t DH) from 10ns to 15ns - Changed CE Access time(t CEA) from 45ns to 60ns - Changed Read cycle time(t RC) from 50ns to 70ns - Changed Write Cycle time(t WC) from 50ns to 70ns - Changed RE Access time(t REA) from 35ns to 40ns - Changed RE High Hold time(t REH) from 15ns to 20ns - Changed WE High Hold time(t WH) from 15ns to 20ns
0.3 1. Device Code is changed
- TBGA package information : ’B’ --> ’D’ Aug. 23th 2001 ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0 K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0 2. VIH ,VIL of K9F2808Q0B(1.8 device) is changed
(before revision)
I/O pins Vcc Q-0.4 Vcc Q
Input High Voltage VIH
Except I/O pins VCC-0.4 VCC
Input Low Voltage,
IL 0.4
All inputs
(after revision)
Vcc Q
I/O pins Vcc Q-0.4
Input High Voltage VIH
Except I/O pins VCC-0.4
Input Low Voltage,
IL -0.3 0.4
All inputs
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
Page Summary Contents For Samsung K9F2808Q0B-DCB0, DIB0 Data Sheet
Manual Details
| Brand | Samsung |
|---|---|
| Pages | 29 |
| File Size | 326.92 KB |
| Published | June 17, 2026 |
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Frequently Asked Questions
K9F2808Q0B 的工作电压范围是多少？
它是一个可以在 1.7 至 1.9 伏特 (V) 电压下工作的设备。
如果主电源电压低于某个值，设备是否会自动禁用功能以提供保护？
是的，内部电压检测器在 Vcc 低于大约 1.1V（针对 K9F2808Q0B）或 2V（针对 K9F2808U0B）时会禁用所有功能。
在使用该设备時如何确保编程/擦除操作的可靠性？
WP 引脚提供硬件保护，建议在上电和断电期间将其保持在 VIL 电平，并且需要至少 1ms 的恢复时间。
不同型号的访问时序参数有什么变化？
例如，从 Revision No. 0.2 到后续版本，多个时序参数（如 tCEA、tWC 等）都进行了修改和更新。