SAMSUNG K4S280432A Data Sheet

Summary

Explore the datasheet for a high-performance CMOS SDRAM module, engineered for modern system applications requiring high bandwidth and reliable performance. This comprehensive manual details the component's electrical specifications, including JEDEC standard compatibility, operational voltages, and timing parameters. It provides critical information on pin configuration, command cycles (like MRS), and advanced features needed by hardware designers and engineers integrating mission-critical memory into compute systems.

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K4S280432A CMOS SDRAM

128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Revision 0.0 Aug. 1999

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.0 Aug. 1999

Page Summary Contents For SAMSUNG K4S280432A Data Sheet

Page 1 K4S280432A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. ...

Page 2 K4S280432A CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM I/O ontrol utput B uffer GENERAL DESCRIPTIONFEATURES • JEDEC standard 3.3V power supply The K4S280432A is 134,217,728 bits synchronous high d...

Page 3 K4S280432A CMOS SDRAM PIN CONFIGURATION (Top view) VDD VSS N.C N.C VDDQ VSSQ N.C N.C DQ0 DQ3 VSSQ VDDQ N.C N.C N.C N.C VDDQ VSSQ N.C N.C DQ1 DQ2 VSSQ VDDQ N.C N.C VDD VSS N.C N.C/RFU WE DQM CAS CLK RA...

Page 4 K4S280432A CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 Storage te...

Page 5 K4S280432A CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Version Parameter Symbol Test Condition Unit Note Burst length = 1 Operating current I...

Page 6 K4S280432A CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit Input levels (Vih/Vil) 2.4/0.4 Input timing measurement reference level 1.4 Input rise and f...

Page 7 K4S280432A CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max Min Max Min Max Min Max CAS latency=3 7.5 CLK cycle time t CC ns CA...

Page 8 K4S280432A CMOS SDRAM IBIS SPECIFICATION 66MHz and 100MHz Pull-up 1.5 2.5 30.5 3.5 IOH Characteristics (Pull-up) 100MHz 100MHz 66MHz Voltage Min Max Min Voltage IOH Min (100MHz) IOH Min (66MHz) IOH Ma...

Page 9 K4S280432A CMOS SDRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4...

Page 10 K4S280432A CMOS SDRAM SIMPLIFIED TRUTH TABLE Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode register set OP code 1,2 Auto refresh Entry Refresh Self refresh Bank active & ro...

Manual Details

Brand	Samsung
Pages	10
File Size	128.33 KB
Published	June 17, 2026

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Frequently Asked Questions

What volatile memory is the K4S280432A?

It is a synchronous high data CMOS SDRAM, organized as 4 x 8,388,608 words by 4 bits.

How many power supply voltages does the device use?

The device uses power supplies VDD and VDDQ for core logic/input buffers (3.3V) and output buffers (3.3-3.6V).

What is the function of DQM?

DQM (Data Mask) blocks data input when active, preventing unwanted writes.

When can the device be used continuously?

It supports a temperature range of -55°C to +150°C for continuous operation.