Samsung K4S280832A Data Sheet/Manual

Summary

The K4S280832A is a high-performance 128Mbit Synchronous SDRAM designed for professional computing systems requiring reliable, high-speed memory solutions. This comprehensive technical manual serves as the definitive resource for hardware engineers and designers integrating this component. It provides detailed functional specifications, including pin configurations, operational timing diagrams, absolute maximum ratings, power consumption guidelines, and advanced control commands (such as Auto/Self Refresh). Use this guide to ensure proper implementation, optimal clock synchronization, and reliable performance across various system applications.

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K4S280832A CMOS SDRAM

128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Revision 0.0 Aug. 1999

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.0 Aug. 1999

Page Summary Contents For Samsung K4S280832A Data Sheet/Manual

Page 1 K4S280832A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. ...

Page 2 K4S280832A CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM I/O ontrol utput B uffer GENERAL DESCRIPTIONFEATURES • JEDEC standard 3.3V power supply The K4S280832A is 134,217,728 bits synchronous high d...

Page 3 K4S280832A CMOS SDRAM PIN CONFIGURATION (Top view) VDD VSS DQ0 DQ7 VDDQ VSSQ N.C N.C DQ1 DQ6 VSSQ VDDQ N.C N.C DQ2 DQ5 VDDQ VSSQ N.C N.C DQ3 DQ4 VSSQ VDDQ N.C N.C VDD VSS N.C N.C/RFU WE DQM CAS CLK RA...

Page 4 K4S280832A CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 Storage te...

Page 5 K4S280832A CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Sym- Version Not Parameter Test Condition Unit bol e-75 Burst length = 1 Operating cur...

Page 6 K4S280832A CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter Value Unit AC input levels (Vih/Vil) 2.4/0.4 Input timing measurement reference level 1.4 Input rise an...

Page 7 K4S280832A CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol Unit Note Min Max Min Max Min Max Min Max Min Max CAS latency=3 7.5 CLK cycle time t CC ns CA...

Page 8 K4S280832A CMOS SDRAM IBIS SPECIFICATION 66MHz and 100MHz Pull-up 1.5 2.5 30.5 3.5 IOH Characteristics (Pull-up) 100MHz 100MHz 66MHz Voltage Min Max Min Voltage IOH Min (100MHz) IOH Min (66MHz) IOH Ma...

Page 9 K4S280832A CMOS SDRAM Minimum VDD clamp current VDD Clamp @ CLK, CKE, CS, DQM & DQ (Referenced to VDD) VDD (V) I (m A) 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4...

Page 10 K4S280832A CMOS SDRAM SIMPLIFIED TRUTH TABLE Command CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP Note Register Mode register set OP code 1,2 Auto refresh Entry Refresh Self Refresh Bank active & ro...

Manual Details

Brand	Samsung
Pages	10
File Size	304.65 KB
Published	June 17, 2026

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