ROHM ZDS020N60 User Guide

Summary

Discover a high-performance N-channel MOSFET designed for advanced power switching applications. This semiconductor component features low on-resistance and exceptional high-speed performance, ensuring efficient energy transfer in demanding circuits. The comprehensive manual provides electrical characteristics, absolute maximum ratings, detailed operational curves (including SOA), and thermal considerations necessary for proper integration into your design. Ideal for power electronics engineers and embedded designers tackling fast switching, reliable power management, and efficiency-critical systems.

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Data Sheet

10V Drive Nch MOSFET ZDS020N60 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET SOP8

Features 1) Low on-resistance. 2) High-speed switching.

3) Wide SOA. (1) (4)

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB Basic ordering unit (pieces) ZDS020N60 (1) Source

(2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain

(8) Drain

1 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID 0.63

Drain current

Pulsed IDP *1 2.5

Source current Continuous IS 0.63

(Body Diode) Pulsed ISP *1 2.5

Power dissipation PD *2

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM ZDS020N60 User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET ZDS020N60 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. (1) (4) Application Sw...

Page 2 Data Sheet ZDS020N60 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ...

Page 3 Data Sheet ZDS020N60 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ra in rr ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 0....

Page 4 Data Sheet ZDS020N60 ta ti ra in -S rc -S ta te is ta ra in rr te -S rc lt Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.8 Switching Characteristics Ta=25°C VDD≒200V pulsed...

Page 5 Data Sheet ZDS020N60 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ...

Page 6 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	6
File Size	1.12 MB
Published	June 04, 2026

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Frequently Asked Questions

What is the continuous drain current rating (D) for this MOSFET?

The continuous Drain Current (I D) is listed as 0.63 A.

How is the component mounted for thermal calculations?

Thermal resistance values are specified assuming mounting on a ceramic board.

What is the minimum gate-source threshold voltage (V g s(th))?

The Gate threshold voltage ranges from a minimum of 2.0 V to 4.0 V.

Are there any specific safety warnings regarding usage?

Yes, the product might cause chip aging and breakdown in an electrified environment, so designing ESD protection is recommended.