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ROHM QS5U28 User Guide

Summary

This versatile component combines a P-channel MOS FET with an integrated Schottky barrier diode, designed for efficient load switching and DC/DC conversion applications. The included manual serves as a detailed technical resource, providing comprehensive electrical characteristics, absolute maximum ratings, and performance graphs essential for reliable product design integration. This datasheet is primarily intended for power electronics engineers and hardware designers requiring high-performance, low-voltage power management solutions.

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Page 1 Text Content

QS5U28

Transistor

2.5V Drive Pch+SBD MOS FET QS5U28

Structure External dimensions (Unit : mm) Silicon P-channel MOS FET

TSMT5

Schottky Barrier DIODE

1.0MAX

Features 1) The QS5U28 combines Pch MOS FET with 0~0.1

a Schottky barrier diode in TSMT5 package. (1) (3)(2)

2) Low on-state resistance with fast switching. 0.4 0.16

3) Low voltage drive (2.5V).

Each lead has same dimensions

4) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U28

Applications Load switch, DC/DC conversion

Packaging specifications Equivalent circuit

Package Taping 1.

Code TR

Basic ordering unit (pieces)

QS5U28

∗1 (1)Gate

(2)Source (1) (2) (3) (3)Anode (4)Cathode

∗1 ESD protection diode (5)Drain ∗2 Body diode

∗ A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.

Rev.A 1/4

Page Summary Contents For ROHM QS5U28 User Guide

Page 1 QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5 Schottky Barrier DIODE 1.0MAX Features 1) The QS5U28 combines Pch MOS FET ...
Page 2 QS5U28 Transistor Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage −20 VVDSS Gate-source voltage ±12 VVGSS Continuous ±2.0 AID Drain current Pulsed ±...
Page 3 IN −I IC IN -S QS5U28 IN −I -S IS on ) ( Transistor Electrical characteristic curves VDS= −10V VGS= −4.5V VGS= −4V Pulsed Pulsed Pulsed Ta=125°C Ta=125°C 75°C 75°C 25°C 25°C −25°C −25°C Ta=125°C IC IN...
Page 4 QS5U28 -S LT −V Transistor Ta=25°C VDD= −15V ID= −2A RG=10Ω Pulsed TOTAL GATE CHARGE : Qg (n C) Fig.10 Dynamic Input Characteristics Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) trtd(o...
Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 5
File Size 81.51 KB
Published June 01, 2026
34 views

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Frequently Asked Questions

What are the general applications for the QS5U28?

It can be used in load switches and DC/DC conversion circuits.

How is static electricity protected when using this device?

A protection diode is built into the gate and source to guard against electrostatic discharge (ESD) when the product is used.

What are the absolute maximum ratings for drain-source voltage and continuous drain current?

The maximum Drain-Source Voltage (VDSS) is -20V, and the continuous ID is ±2.0 A.

Can this device handle high temperatures?

Yes, it has a total operating range of -55°C to +150°C when mounted on a ceramic board.

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