ROHM RW1C020UN User Guide

Summary

This highly efficient N-channel MOSFET is designed for switching applications in general electronic equipment requiring high reliability and low power loss. Featuring advanced specifications such as low on-resistance, built-in protection diodes, and compact WEMT6 packaging, it maintains robust performance at low voltages (1.5V). This manual provides engineers with comprehensive electrical characteristics—including details on timing response, breakdown voltage, and thermal data—enabling precise integration into consumer electronics, communication devices, and automated systems.

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1.5V Drive Nch MOSFET RW1C020UN Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

WEMT6

Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Space Saving,

Small Surface Mount Package (WEMT6). 4) Low voltage drive (1.5V drive).

Abbreviated symbol : XK

Applications Inner circuit Switching

Packaging specifications

Package Taping

Type Code T2R

Basic ordering unit (pieces) (1) Drain (2) Drain

RW1C020UN (3) Gate

(4) Source ∗1 ESD PROTECTION DIODE (5) Drain ∗2 BODY DIODE (6) Drain

Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit

Drain-source voltage VVDSS

Gate-source voltage ±10 VVGSS

Continuous ±2 AID

Drain current

Pulsed ±6 AIDP Source current Continuous 0.5 AIS

(Body diode) ∗1

Pulsed AISP

Total power dissipation 0.7 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C / WRth (ch-a) ∗ When mounted on a ceramic board

Page Summary Contents For ROHM RW1C020UN User Guide

Page 1 1.5V Drive Nch MOSFET RW1C020UN Structure Dimensions (Unit : mm) Silicon N-channel MOSFET WEMT6 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Space Saving, Small Surface Mount Pa...

Page 2 RW1C020UN Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS= ±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID=...

Page 3 RW1C020UN Data Sheet ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R on )[m AI EN : I [A ES IS TA : R S( on )[m S( Electrical characteristics curves Ta=25°C Ta=25°C VDS= 10V Pulsed Pulsed...

Page 4 RW1C020UN Data Sheet EV ER SE AI EN : I [A AT E- SO VO LT AG : V S [ V] VGS=0V Ta= 25°C Ta=25°C Pulsed Pulsed VDD= 10V ID= 2.0A td(off) VGS=4.5V tf RG=10Ω ID= 1.0A Pulsed Ta=125°C 0.1 Ta=75°C Ta=25°C ...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	224.37 KB
Published	June 01, 2026

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Frequently Asked Questions

What voltage drive does this MOSFET require?

It supports low-voltage 1.5V drive operation.

Can I use this device for critically reliable systems like aerospace machinery?

No. It is not designed for equipment where failure threatens human life or creates a risk of injury.

What is the maximum drain-source operating voltage (VDSS)?

The absolute maximum rating specified for the Drain-Source Voltage is 20 V.

Are these products resistant to radiation?

No, the products are not designed to be radiation tolerant.