ROHM R6046FNZ User Guide
Summary
This high-performance N-channel MOSFET, R6046FNZ, is engineered for efficient power switching applications requiring low on-resistance and minimal input capacitance. This document provides comprehensive technical data for electrical designers, including absolute maximum ratings, detailed switching characteristics, dynamic transfer curves, and thermal performance analysis. Use this resource to validate circuit design parameters and ensure optimal reliability in demanding electronic systems.
Page 1 Text Content
Data Sheet
10V Drive Nch MOSFET R6046FNZ Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET TO-3PF 5.5 3.0
Features 1) Low on-resistance. 2) Low input capacitance.
2.0 2.0 3) High ESD. 3.0
(1) Gate (1) (2) (3)
(2) Drain
Application 5.455.45
(3) Source
Switching
Packaging specifications Inner circuit
Package Bulk Type Code
Basic ordering unit (pieces)
R6046FNZ 4.
(1) Gate 2.
(2) Drain (3) Source
1 BODY DIODE
Absolute maximum ratings (Ta = 25C)
Parameter Symbol Limits Unit .5 .0
Drain-source voltage VDSS
Gate-source voltage VGSS 30
Continuous ID *3 46
Drain current
Pulsed IDP *1 115 Source current Continuous IS *3
(Body Diode) Pulsed ISP *1
Avalanche current IAS *2 Avalanche energy EAS *2 m J Power dissipation PD *4
Channel temperature Tch C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
Thermal resistance
Parameter Symbol Limits Unit
Channel to Case Rth (ch-c) 1.04 C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A
Page Summary Contents For ROHM R6046FNZ User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 7 |
| File Size | 1.14 MB |
| Published | June 01, 2026 |
Enter the captcha to get the download link: