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ROHM R6046FNZ User Guide

Summary

This high-performance N-channel MOSFET, R6046FNZ, is engineered for efficient power switching applications requiring low on-resistance and minimal input capacitance. This document provides comprehensive technical data for electrical designers, including absolute maximum ratings, detailed switching characteristics, dynamic transfer curves, and thermal performance analysis. Use this resource to validate circuit design parameters and ensure optimal reliability in demanding electronic systems.

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Data Sheet

10V Drive Nch MOSFET R6046FNZ Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-3PF 5.5 3.0

Features 1) Low on-resistance. 2) Low input capacitance.

2.0 2.0 3) High ESD. 3.0

(1) Gate (1) (2) (3)

(2) Drain

Application 5.455.45

(3) Source

Switching

Packaging specifications Inner circuit

Package Bulk Type Code

Basic ordering unit (pieces)

R6046FNZ 4.

(1) Gate 2.

(2) Drain (3) Source

1 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit .5 .0

Drain-source voltage VDSS

Gate-source voltage VGSS 30

Continuous ID *3 46

Drain current

Pulsed IDP *1 115 Source current Continuous IS *3

(Body Diode) Pulsed ISP *1

Avalanche current IAS *2 Avalanche energy EAS *2 m J Power dissipation PD *4

Channel temperature Tch C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, VDD=50V, RG=25, Tch=25°C

*3 Limited only by maximum channel temperature allowed.

*4 TC=25°C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 1.04 C / W

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© 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A

Page Summary Contents For ROHM R6046FNZ User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET R6046FNZ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-3PF 5.5 3.0 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3) High ESD. 3.0 (...
Page 2 Data Sheet R6046FNZ Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS I...
Page 3 Data Sheet R6046FNZ Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ra in rr [m ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) ...
Page 4 Data Sheet R6046FNZ ta ti ra in -S rc -S ta te is ta rw rd ra fe it ta te -S rc lt (o [m fs Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage VDS=10V VG...
Page 5 Data Sheet R6046FNZ rs ry im rr [n Fig.13 Reverse Recovery Time vs. Source Current Ta=25°C VGS=0V di/dt=100A/μs Pulsed Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5...
Page 6 Data Sheet R6046FNZ Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveform...
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