ROHM R5005CNX User Guide

Summary

This N-channel MOSFET is a high-performance power device engineered for low on-resistance and fast switching applications. The comprehensive manual provides engineers with detailed technical specifications, including absolute maximum ratings, precise electrical characteristics, and measurement circuit guidelines. This datasheet is essential for professionals designing robust electronic systems that require efficient and reliable power switching functionality.

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10V Drive Nch MOSFET R5005CNX Structure Dimensions (Unit : mm)

TO-220FM

Silicon N-channel MOSFET

Features 1) Low on-resistance.

2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

4) Drive circuits can be simple.

(1)Base

5) Parallel use is easy.

(2)Collector (2) (3)(1)

(3)Emitter

Applications Inner circuit Switching

Packaging specifications

Package Bulk 2. 8.

Type Basic ordering unit (pieces) 500pcs

(1) Gate

∗1 Body Diode (2) Drain ∗2 ESD Protection Diode (3) Source

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS

Gate-source voltage VGSS ±30

Continuous ±5ID

Drain current

Pulsed IDP A±20

Continuous

Source current

(Body Diode) ∗1

Pulsed ISP

Avalanche current IAS 2.5

Avalanche energy EAS ∗2 1.6 m J

Total power dissipation (Tc=25°C) PD

Channel temperature Tch °C

Range of storage temperature Tstg °C−55 to +150 ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed

Thermal resistance

Parameter Symbol Limits Unit

Channel to case 3.13 °C/WRth(ch-c)

Page Summary Contents For ROHM R5005CNX User Guide

Page 1 10V Drive Nch MOSFET R5005CNX Structure Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to ...

Page 2 R5005CNX Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 μA VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID=1m...

Page 3 R5005CNX Data Sheet Measurement circuit Fig.1 Switching time measurement circuit Fig.2 Switching waveforms IG(Const.) Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform Fig.5 Avalanche ...

Page 4 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	4
File Size	194.27 KB
Published	June 01, 2026

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Frequently Asked Questions

What is the maximum continuous drain current rating for this MOSFET?

The device supports a continuous $I_D$ of ±5 A.

What must be considered when designing cooling or power circuits?

You must account for the total power dissipation ($P_D$) and the channel-to-case thermal resistance ($R_{th(ch-c)}$) of 3.13 °C/W.

Is this MOSFET suitable for life-critical systems like aerospace machinery?

No, it is not designed or manufactured for use in equipment requiring an extremely high level of reliability, such as medical instruments or transportation equipment.