ROHM R5021ANX User Guide

Summary

This documentation provides comprehensive technical specifications for the R5021ANX N-channel MOSFET transistor, ideal for high-performance switching applications. Featuring low on-resistance and fast switching capabilities, this reliable component is designed for ease of integration into complex power circuits up to 500V. The manual details electrical characteristics, thermal performance, and operating curves, making it essential for electronics engineers designing robust DC motor drives, power converters, or general industrial switching equipment.

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R5021ANX

Transistors

10V Drive Nch MOSFET R5021ANX

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features 1) Low on-resistance.

2) Fast switching speed. 1.3 3) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8

4) Drive circuits can be simple. (1)Base

2.54 0.75 2.62.54 (2)Collector (2) (3)(1)

5) Parallel use is easy.

(3)Emitter

Applications

Switching

Packaging specifications Inner circuit Package Bulk Type Code Basic ordering unit (pieces)

R5021ANX

Absolute maximum ratings (Ta=25 C)

Parameter Symbol Limits Unit

(1) Gate (2) Drain

Drain-source voltage VDSS ∗1 Body Diode

(3) Source

Gate-source voltage VGSS ±30

Continuous ±21ID

Drain current

Pulsed IDP A±84

Continuous

Source current

(Body Diode) ∗1

Pulsed ISP

Avalanche Current IAS 10.5

Avalanche Energy EAS ∗2 29.6 m J

Total power dissipation (Tc=25°C) PD

Channel temperature Tch °C

Range of storage temperature Tstg °C−55 to +150 ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed

Page Summary Contents For ROHM R5021ANX User Guide

Page 1 R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1) Low on-resistance. 2) Fast switching speed. 1.3 3) Gate-source voltage...

Page 2 R5021ANX Transistors Thermal resistance Parameter Symbol Limits Unit Channel to case 2.5 °C/WRth(ch-c) Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source ...

Page 3 ST AT IC AI -S -S TA TE ES IS TA : R S( on ) ( AI R5021ANX EN : I (A AI EN : I (A Transistors Electrical characteristic curves Operation in this 7.0V Ta= 25°C PW= 100us 10V area is limited by 8.0V 6.5...

Page 4 AR IZ ED AN SI EN TH ER AL EV ER SE EC VE R5021ANX TI E: r ( ns EV ER SE AI EN : I (A ES IS TA : r (t Transistors Ciss Ta= 25°C VGS= 0V VDD= 250V Pulsed ID= 21A RG= 10 Pulsed Ta= 125°C Ta= 75°C Ta= 25...

Page 5 R5021ANX Transistors Switching characteristics measurement circuit Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms IG(Const.) Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gat...

Page 6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	6
File Size	232.32 KB
Published	May 31, 2026

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Frequently Asked Questions

What is the minimum operational resistance (RDS(on))?

Under specified conditions, the static drain-source on-state resistance is 0.16 Ω.

How much power can this transistor dissipate at room temperature?

The total power dissipation Pd under normal conditions is limited to 50 W.

Are there any restrictions when using this device with critical safety equipment?

You must consult a sales representative if using it in devices requiring extremely high reliability, such as medical or aerospace machinery.

What are the specifications for parallel use?

The manual indicates that parallel use of the transistors is easy.