ROHM R5016FNX User Guide

Data Sheet

10V Drive Nch MOSFET R5016FNX Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features

1) Low on-resistance. 1.2

2) Low input capacitance.

3) High ESD. 0.8

(1) Gate

(2) Drain

(3) Source

Application Switching

Packaging specifications Inner circuit

Package Bulk Type Code

Basic ordering unit (pieces)

R5016FNX

(1) Gate (1) (3)(2) (2) Drain (3) Source 1 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID 16

Drain current

Pulsed IDP 64

Continuous IS *3

Source current

(Body Diode) *1

Pulsed ISP

Avalanche current IAS *2 Avalanche energy EAS *2 17.1 m J *4

Power dissipation PD Channel temperature Tch C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, VDD=50V, RG=25, Tch=25°C

*3 Limited only by maximum channel temperature allowed.

*4 TC=25°C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

* TC=25°C

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