ROHM VT6J1 User Guide
Summary
The VT6J1 is a compact, low voltage drive P-channel MOSFET engineered for efficient switching in demanding electronic applications. It delivers superior performance with low on-resistance and minimal power consumption, making it ideal for use in audio-visual equipment, office automation, and communication devices. This comprehensive datasheet provides engineers with all necessary technical specifications, including absolute maximum ratings, detailed electrical characteristics (like $R_{DS(on)}$, leakage), and application curves crucial for reliable circuit design.
Page 1 Text Content
1.2V Drive Pch + Pch MOSFET VT6J1 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET VMT6
Features 1) Low on-resistance.
2) Small package(VMT6). (1) (2) (3)
3) Low voltage drive(1.2V drive). 0.4 0.4 0.8±0.1
Abbreviated symbol : J01
Application Switching
Packaging specifications Inner circuit
Package Taping
Type Code T2CR
Basic ordering unit (pieces)
VT6J1 ∗2 ∗2
(1) Tr1 Source
(2) Tr1 Gate 1.
(3) Tr2 Drain 0. 0.
(4) Tr2 Source
(5) Tr2 Gate (6) Tr1 Drain *1 ESD PROTECTION DIODE
*2 BODY DIODE
Absolute maximum ratings (Ta = 25C)
Parameter Symbol Limits Unit
Drain-source voltage VDSS 20 Gate-source voltage VGSS 10 Continuous ID 100 m A
Drain current
Pulsed IDP *1 400 m A
0.15 W/TOTAL PDPower dissipation *2 0.12 W/ELEMENT
Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a reference land.
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©2012 ROHM Co., Ltd. All rights reserved. 1/5 2012.04 - Rev.B
Page Summary Contents For ROHM VT6J1 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 6 |
| File Size | 431.20 KB |
| Published | June 18, 2026 |
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