ROHM US6T7 User Guide
Summary
This datasheet provides comprehensive specifications for the US6T7 transistor, optimized for low-frequency amplification and driver applications. The manual details critical electrical parameters such as collector current ($I_C$), transition frequency ($f_T$), gain (hFE), saturation voltage ($V_{CE(sat)}$), and various operating ratings. It includes detailed graphs and technical data necessary for circuit designers and engineers to accurately model performance, select appropriate biasing points, and integrate the transistor into reliable electronic equipment.
Page 1 Text Content
US6T7
Transistors
Low frequency amplifier (-30V, -1.5A) US6T7
Application Dimensions (Unit : mm)
Low frequency amplifier Driver
Features 1) A collector current is large. 2) VCE(sat) : max. −370m V At IC = − 1A / IB = −50m A
ROHM : TUMT6 Abbreviated symbol : T07
Absolute maximum ratings (Ta=25°C) Equivalent circuit
Parameter Symbol Limits Unit
Collector-base voltage VCBO −30 (4)(5)(6)
Collector-emitter voltage VCEO −30 Emitter-base voltage VEBO −6
0. 2M ax
IC −1.5
Collector current
ICP −3
Power dissipation PC
Junction temperature Tj °C (1) (2) (3)
Range of storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=1ms ∗2 Each Terminal Mounted on a Recommended ∗3 Mounted on a 25mm×25mm× 0.8mm Ceramic substratet
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −30 IC=−10µA Collector-emitter breakdown voltage BVCEO −30 IC=−1m A Emitter-base breakdown voltage BVEBO −6 IE=−10µA
Collector cutoff current ICBO −100 n A VCB=−30V
Emitter cutoff current IEBO −100 n A VEB=−6V Collector-emitter saturation voltage VCE(sat) −190 −370 m V IC=−1A, IB=−50m A
DC current gain h FE VCE=−2V, IC=−100m A Transition frequency f T MHz VCE=−2V, IE=100m A, f=100MHz
Collector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz
∗ Pulsed
Rev.B 1/2
Page Summary Contents For ROHM US6T7 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 70.03 KB |
| Published | June 06, 2026 |
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Frequently Asked Questions
Can this transistor withstand high power dissipation?
The maximum power dissipation is PC = 1.0 W, when mounted on a 25mm×25mm×0.8mm Ceramic substrate.
What are the absolute voltage limits for the US6T7?
Maximum voltage ratings include VCBO of -30 V and VCEO of -30 V under Ta=25°C.
How is this component suited for high-reliability applications (e.g., medical)?
The manual advises consulting a sales representative before using it in safety-critical equipment like medical or aerospace machinery.
What are the electrical parameters at standard operating conditions?
For IC = −1 A, VCE(sat) is typically −370 mV and the collector current (ICP) maximum rating is −3 A.