ROHM US6M1 User Guide

Summary

The US6M1 is a dual N-channel/P-channel MOSFET transistor designed for efficient power switching and DC/DC converter applications. Featuring low on-resistance, a small surface mount package, and integrated gate protection, it ensures reliable performance in demanding high-power circuits. This comprehensive manual provides detailed electrical specifications, absolute maximum ratings, and technical transfer curves, making it the essential resource for engineers designing advanced power electronics systems.

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US6M1

Transistors

4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET

TUMT6

Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6).

Abbreviated symbol : M01

Application Power switching, DC / DC converter.

Packaging specifications Equivalent circuit

Package Taping

Type Code TR

Basic ordering unit (pieces)

US6M1

0. 2M ax

∗1 (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate

(1) (2) (3) (3) Tr2 (Pch) Drain

(4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Tr1 (Nch) Drain

Absolute maximum ratings (Ta=25°C)

Limits

Parameter Symbol Unit

Tr1 : Nchannel Tr2 : Pchannel

Drain-source voltage VDSS −20 V30 Gate-source voltage VGSS −12 Continuous ID ±1.4 ±1

Drain current

∗1 Pulsed IDP ±5.6 ±4 Continuous Source current IS 0.6 −0.4 (Body diode) ∗1 Pulsed ISP 5.6 −4

W / TOTAL∗2

Total power dissipation PD

W / ELEMENT0.7 Channel temperature °CTch

Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board.

Thermal resistance Parameter Symbol Limits Unit

°C / W /TOTAL

Channel to ambient Rth (ch-a)

°C / W / ELEMENT

∗2 Mounted on a ceramic board.

Rev.B 1/7

Page Summary Contents For ROHM US6M1 User Guide

Page 1 US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET TUMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Sma...

Page 2 US6M1 Transistors N-ch Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS µA VGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID=1m A...

Page 3 US6M1 Transistors P-ch Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS −10 µA VGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20...

Page 4 US6M1 IC IN -S IN IT p F Transistors -S IS on ) ( N-ch Electrical characteristic curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD=15V VDD=15V VGS=0V VGS=4.5V ID=1.5A RG=10Ω RG=10Ω Ciss Pulsed Pulsed td (off)...

Page 5 US6M1 IC IN -S IN −I IT p F Transistors -S IS on ) ( P-ch Electrical characteristic curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD= −15V VDD= −15V VGS=0V VGS= −4.5V ID= −1A RG=10Ω RG=10Ω Pulsed Pulsed td (...

Page 6 US6M1 Transistors N-ch Measurement circuit Pulse Width VGS ID VDS 90% VGS 10% 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS ID VDS Qg I...

Page 7 US6M1 Transistors P-ch Measurement circuit Pulse Width VGS ID VGS trtd(on) tftd(off) ton toff Fig.3-1 Switching Time Measurement Circuit Fig.3-2 Switching Waveforms VGS ID VDS Qg IG(Const.) Qgs Qgd Ch...

Page 8 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	8
File Size	108.28 KB
Published	June 18, 2026

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Frequently Asked Questions

What is the maximum permissible power dissipation (Pd)?

The maximum total power dissipation (TOTAL Pd) is 0.7 W / TOTAL.

Is this MOSFET built-in protection for ESD?

Yes, it features a built-in G-S Protection Diode.

Can these transistors be used in high-reliability life support equipment?

No, consult with the sales representative if use in critical safety machinery is required.

What are the key electrical limitations for drain current (Id)?

The continuous drain current limit (TOTAL I) for Tr1 (Nch) is 1.4 A, and there is a pulsed limit of up to ±5.6 A.