ROHM US6K4 User Guide
Summary
Optimized for switching applications, this component delivers high-speed performance and low on-resistance in a compact package, utilizing two integrated N-channel MOSFETs driven by 1.8V. This advanced manual serves as an essential reference for electrical engineers designing power circuits. It provides comprehensive data, including detailed absolute maximum ratings, full electrical characteristics tables (e.g., $R_{DS(on)}$), switching time curves, and thermal parameters required for reliable circuit implementation in demanding applications.
Page 1 Text Content
US6K4
Transistors
1.8V Drive Nch+Nch MOSFET US6K4 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET
TUMT6
Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 1.8V drive.
Abbreviated symbol : K04
Applications Switching
Packaging specifications Inner circuit
Package Taping
Type Code TR
Basic ordering unit (pieces) ∗1
US6K4
0. 2M ax
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain
(1) (2) (3) (4) Tr2 Source
(5) Tr2 Gate
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE (6) Tr1 Drain
Absolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter Symbol Limits Unit
Drain-source voltage VVDSS Gate-source voltage ±10 VVGSS Continuous ±1.5 AID
Drain current
Pulsed ±3.0 AIDP Source current Continuous 0.6 AIS
(Body diode) ∗1
Pulsed 2.4 AISP ∗2 1.0 W / TOTAL
Total power dissipation PD
W / ELEMENT0.7 Channel temperature °CTch
Range of storage temperature −55 to +150 °CTstg
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Thermal resistance
Parameter Symbol Limits Unit
°C/W / TOTAL
Channel to ambient Rth(ch-a)
°C/W / ELEMENT179
∗ Mounted on a ceramic board
Rev.A 1/3
Page Summary Contents For ROHM US6K4 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 4 |
| File Size | 93.10 KB |
| Published | July 10, 2026 |
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