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ROHM US6K1 User Guide

Summary

This low on-resistance N-channel Power MOSFET is engineered for robust switching applications, featuring a space-saving package and simple 2.5V operation drive voltage. The comprehensive technical data sheet provides electronic designers and power engineers with all necessary detailed information, including absolute maximum ratings, thermal resistances, and complex switching characteristics, simplifying integration into high-efficiency circuit designs.

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2.5V Drive Nch+Nch MOSFET US6K1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TUMT6

Features 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage drive (2.5V drive).

Abbreviated symbol : K01

Applications Switching

Packaging specifications Inner circuit

Package Taping (6) (5) (4)

Type Code TR

Basic ordering unit (pieces)

US6K1

∗2 0. 2M ax

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain

(1) (2) (3) (4) Tr2 Source

(5) Tr2 Gate

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Tr1 Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±1.5 AID

Drain current

Pulsed ±6 AIDP Source current Continuous 0.6 AIS

(Body diode) ∗1

Pulsed AISP ∗2 1.0 W / TOTAL

Total power dissipation PD

W / ELEMENT0.7 Channel temperature °CTch Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

°C/W / TOTAL

Channel to ambient Rth(ch-a)

°C/W / ELEMENT179

∗ Mounted on a ceramic board

www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.03 - Rev.B 1/3

Page Summary Contents For ROHM US6K1 User Guide

Page 1 2.5V Drive Nch+Nch MOSFET US6K1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space savingsmall surface mount package (TUMT6). 3) Low voltage driv...
Page 2 US6K1 Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS µA VGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID= 1m A, VGS...
Page 3 US6K1 Data Sheet IC IN -S IC IN -S IT IN IM t ( ns -S IS on ) ( -S IS Electrical characteristics curves Ta=25°C Ta=25°C VDS=10V VDD=15V VDD=15V Pulsed VGS=4.5V ID=1.5A RG=10Ω RG=10Ω Pulsed Pulsed Ta=1...
Page 4 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement wit...

Manual Details

Brand ROHM
Pages 4
File Size 186.78 KB
Published June 20, 2026
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Frequently Asked Questions

What is the continuous drain current rating for this MOSFET?

The maximum continuous drain current (Id) is specified as ±1.5 A.

Are there mounting requirements or considerations for thermal dissipation?

For accurate channel-to-ambient thermal resistance measurement, the component must be mounted on a ceramic board.

What are the primary distinguishing features of the US6K1 MOSFET?

It is noted for low on-resistance, space saving using the TUMT6 package, and low voltage drive capability (2.5V).

Can this MOSFET be used in life-critical equipment like medical or aerospace machinery?

No. The product is not designed for systems requiring extreme reliability, as failure could pose a threat to human life.

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