ROHM UMT3906 SST3906 MMST3906 User Guide
Summary
These PNP General Purpose Transistors are reliable solid-state components designed for various electronics applications. This comprehensive manual provides detailed technical documentation, including absolute maximum ratings, electrical characteristics, saturation curves, and time constants ($t_r$, $t_f$). It is essential reading for electronic engineers and designers who require precise performance data to optimize circuit design, ensuring optimal functionality in low-to-medium power switching and amplification circuits.
Page 1 Text Content
UMT3906/SST3906/MMST3906
Transistors
PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906
Features Dimensions (Unit : mm) UMT3906
1) BVCEO > −40V (IC= −1m A) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance.
(1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-70 (3) Collector
Package, marking, and packaging specifications
SST3906
Type UMT3906 SST3906 MMST3906 Packaging type UMT3 SST3 SMT3 Marking R2A R2A R2A
(1) Emitter
Code T106 T116 T146 (2) Base
Basic ordering unit (pieces) ROHM : SST3 (3) Collector
MMST3906
Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit
(1) Emitter Collector-base voltage VCBO −40 ROHM : SMT3 (2) Base EIAJ : SC-59 (3) Collector
Collector-emitter voltage VCEO −40 Emitter-base voltage VEBO −5 IO −0.2Collector current
UMT3906
Collector Power 6.2
SST3906,MMST3906 Pd
dissipation
SST3906,MMST3906 0.35 ∗W
Junction temperature Tj °C
Storage temperature Tstg −55 to +150 °C ∗ When mounted on a 7 5 0.6mm ceramic board.+
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Max.Typ. Unit Conditions
Collector-base breakdown voltage BVCBO −40 IC= −10µA Collector-emitter breakdown voltage BVCEO −40 IC= −1m A Emitter-base breakdown voltage BVEBO −5 IE= −10µA Collector cutoff current ICES −50 n A VCB= −30V Emitter cutoff current IEBO −50 n A VEB= −3V
−0.25 IC/IB= −10m A/ −1m A
Collector-emitter saturation voltage VCE(sat)
−0.4 IC/IB= −50m A/ −5m A −0.65 −0.85 IC/IB= −10m A/ −1m A
Base-emitter saturation voltage VBE(sat)
−0.95 IC/IB= −50m A/ −5m A VCE= −1V, IC= −0.1m A VCE= −1V, IC= −1m A
DC current transfer ratio h FE VCE= −1V, IC= −10m A
VCE= −1V, IC= −50m A VCE= −1V, IC= −100m A
Transition frequency f T MHz VCE= −20V, IE=10m A, f=100MHz
Collector output capacitance Cob 4.5 p F VCB= −10V, f=100k Hz, IE=0A
Emitter input capacitance Cib p F VCB= −0.5V, f=100k Hz, IC=0A Delay time td ns VCC= −3V, VBE(OFF)= −0.5V,IC= −10m A, IB1= −1m A Rise time tr ns VCC= −3V, VBE(OFF)= −0.5V,IC= −10m A, IB1= −1m A Storage tiem tstg ns VCC= −3V, IC= −10m A, IB1= −IB2= −1m A Fall time tf ns VCC= −3V, IC= −10m A, IB1= −IB2= −1m A
Rev.B 1/4
Page Summary Contents For ROHM UMT3906 SST3906 MMST3906 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 5 |
| File Size | 121.83 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
Can I use this transistor in life-critical equipment like medical or aerospace devices?
For equipment requiring an extremely high level of reliability (e.g., medical instruments, transportation equipment), consult a sales representative and incorporate derating characteristics.
What is the maximum collector-base breakdown voltage (VCEBO)?
The absolute maximum rating for VCEBO is -40 V.
Which older series of transistors does this model complement?
It complements the T3904/SST3904/MMST3909 series.
What must I do if I use these products outside the specified operating range?
Rohm cannot be held responsible for damages, so users must account for derating and implement safety features to prevent potential accidents.